240. W. Tian, V. Vaithyanathan, D.G. Schlom, Q. Zhan, S.Y. Yang, Y.H. Zhu, and R. Ramesh, “Epitaxial Integration of (0001) BiFeO₃ with (0001) GaN,” submitted to Applied Physics Letters.

239. M. Wang, W. He, T.P. Ma, L. F. Edge, and D. G. Schlom, “Electron Tunneling Spectroscopy Study of Amorphous Films of the Gate Dielectric Candidates LaAlO₃ and LaScO₃,” submitted to Applied Physics Letters.

238. A.V. Pogrebnyakov, E. Maertz, R.W. Wilke, Q. Li, A. Soukiassian, D.G. Schlom, J.M. Redwing, A. Findikoglu, and X. X. Xi, “Polycrystalline MgB₂ Films on Flexible YSZ Substrates Grown by Hybrid Physical-Chemical Vapor Deposition,” submitted to IEEE Transactions on Applied Superconductivity.

237. A. Soukiassian, W. Tian, D.A. Tenne, X.X. Xi, D.G. Schlom, N.D. Lanzillotti-Kimura, A. Bruchhausen, A. Fainstein, H.P. Sun, X.Q. Pan, A. Cros, and A. Cantarero, “Acoustic Bragg Mirrors and Cavities Made using Piezoelectric Oxides,” submitted to Applied Physics Letters.

236. J.M.J. Lopes, M. Roeckerath, T. Heeg, E. Rije, J. Schubert, S. Mantl, V.V. Afanas’ev, S. Shamuilia, A. Stesmans, Y. Jia, and D.G. Schlom “Lanthanum Lutetium Oxide Thin Films as an Alternative High-k Gate Dielectric,” submitted to Applied Physics Letters.

235. R. Uecker, H. Wilke, D.G. Schlom, B. Velickov, P. Reiche, A. Polity, M. Bernhagen, and M. Rossberg, “Spiral Formation during Czochralski Growth of Rare-Earth Scandates,” submitted to Journal of Crystal Growth.

234. M.A. Zurbuchen, W. Tian, X.Q. Pan, D. Fong, S.K. Streiffer, M.E. Hawley, J. Lettieri, Y. Jia, G. Asayama, S.J. Fulk, D.J. Comstock, S.B. Knapp, A.H. Carim, and D.G. Schlom, “Morphology, Structure, and Nucleation of Out-of-phase Boundaries (OPBs) in Epitaxial Films of Layered Oxides,” submitted to Journal of Materials Research.

233. A. Vasudevarao, A. Kumar, L. Tian, J.H. Haeni, Y.L. Li, Q.X. Jia, R. Uecker, P. Reiche, L.Q. Chen, D.G. Schlom, and V. Gopalan, “Mutiferroic Domain Dynamics in Strained Strontium Titanate Films,” submitted to Physical Review B.

232. W. Tian, J.H. Haeni, E. Hutchinson, B.L. Sheu, M.A. Zurbuchen, M.M. Rosario, P. Schiffer, X.Q. Pan, Y. Liu, and D.G. Schlom, “Effect of Dimensionality on Magnetism in the Layered Sr_n+1Ru_nO_3n+1 Oxide Series,” submitted to Physical Review Letters.

231. L.F. Edge, V. Vaithyanathan, D.G. Schlom, R.T. Brewer, S. Rivillon, Y.J. Chabal, M.P. Agustin, Y. Yang, S. Stemmer, H.S. Craft, J-P. Maria, M.E. Hawley, B. Holländer, J. Schubert, and K. Eisenbeiser, “Molecular Beam Deposition and Thermal Stability of Amorphous Lanthanum Aluminate Thin Films on Silicon,” submitted to Journal of Applied Physics.

230. J.H. Haeni, A.M. Ellis, D.G. Schlom, S.A. Chambers, J. Schottenfeld, T.E. Mallouk, J. Robertson, W. Tian, and X.Q. Pan, “Band Alignment of Sr₂TiO₄/SrTiO₃ Heterojunctions,” submitted to Applied Physics Letters.

229. D.G. Schlom, C.A. Billman, J.H. Haeni, J. Lettieri, P.H. Tan, R.R.M. Held, S. Völk, and K.J. Hubbard, “High-k Candidates for use as the Gate Dielectric in Silicon MOSFETs,” submitted to Applied Physics A.

228. D.A. Tenne, A. Bruchhausen, N.D. Lanzillotti-Kimura, A. Fainstein, R. Katiyar, A. Cantarero, A. Soukiassian, V. Vaithyanathan, J.H. Haeni, W. Tian, D.G. Schlom, K.J. Choi, D.M. Kim, C.B. Eom, H.P. Sun, X.Q. Pan, Y.L. Li, L.Q. Chen, Q.X. Jia, S.M. Nakhmanson, K.M. Rabe, and X.X. Xi, “Probing Nanoscale Ferroelectricity by Ultraviolet Raman Spectroscopy,” Science 313 (2006) 1614-1616.

227. Y.-H. Chu, Q. Zhan, L.W. Martin, M.P. Cruz, P.-L. Yang, G.W. Pabst, F. Zavaliche, S.-Y. Yang, J.-X. Zhang, L.Q. Chen, D.G. Schlom, I.-N. Lin, T.-B. Wu, and R. Ramesh, “Nanoscale Domain Control in Multiferroic BiFeO₃ Thin Films,” Advanced Materials 18 (2006) 2307-2311.

226. W. Tian, J.C. Jiang, X.Q. Pan, J.H. Haeni, Y.L. Li, L.Q. Chen, D.G. Schlom, J.B. Neaton, and K.M. Rabe, and Q.X. Jia, “Structural Evidence for Enhanced Polarization in a Commensurate Short-Period BaTiO₃ / SrTiO₃ Superlattice,” Applied Physics Letters 89 (2006) 092905-1 – 092905-3.

225. L.F. Edge, D.G. Schlom, S. Rivillon, Y.J. Chabal, M.P. Agustin, S. Stemmer, T. Lee, M.J. Kim, H.S. Craft, J.-P. Maria, M.E. Hawley, B. Holländer, J. Schubert, and K. Eisenbeiser, “Thermal Stability of Amorphous LaScO₃ Films on Silicon,” Applied Physics Letters 89 (2006) 062902-1 – 062902-3.

224. V. Vaithyanathan, J. Lettieri, W. Tian, A. Kochhar, H. Ma, A. Sharan, A. Vasudevarao, V. Gopalan, Y. Li, L.Q. Chen, P. Zschack, J.C. Woicik, J. Levy, and D.G. Schlom, “c-Axis Oriented Epitaxial BaTiO₃ Films on (001) Si,” Journal of Applied Physics 100 (2006) 024108-1 – 024108-9.

223. L.V. Goncharova, D.G. Starodub, E. Garfunkel, T. Gustafsson, V. Vaithyanathan, J. Lettieri, and D.G. Schlom, “Interface Structure and Thermal Stability of Epitaxial SrTiO3 Thin Films on Si (001),” Journal of Applied Physics 100 (2006) 014912-1 – 014912-6.

222. H.M. Christen, G.E. Jellison, Jr., I. Ohkubo, S. Huang, M.E. Reeves, E. Cicerrella, J.L. Freeouf, Y. Jia, and D.G. Schlom, “Dielectric and Optical Properties of Epitaxial Rare-Earth Scandate Films and their Crystallization Behavior,– Applied Physics Letters 88 (2006) 262906-1 – 262906-3.

221. Y.L. Li, S. Choudhury, J.H. Haeni, M.D. Biegalski, A. Vasudevarao, A. Sharan, H.Z. Ma, J. Levy, V. Gopalan, S. Trolier-McKinstry, D.G. Schlom, Q.X. Jia, and L.Q. Chen, “Phase Transitions and Domain Structures in Strained SrTiO₃ Thin Films,” Physical Review B 73 (2006) 184112-1 – 184112-13.

220. M.D. Biegalski, Y. Jia, D.G. Schlom, S. Trolier-McKinstry, S.K. Streiffer, W. Chang, S.W. Kirchoefer, R. Uecker, and P. Reiche, “Relaxor Ferroelectricity in Strained Epitaxial SrTiO₃ Thin Films on DyScO₃ Substrates,” Applied Physics Letters 88 (2006) 192907-1 – 192907-3.

219. M.A. Zurbuchen, J. Lettieri, Y. Jia, A.H. Carim, S.K. Streiffer, and D.G. Schlom, “Out-of-phase Boundary (OPB) Nucleation in Layered Oxides,” in Ferroelectric Thin Films XIII edited by R. Ramesh, Jean-Paul Maria, Marin Alexe, and Vikram Joshi, Vol. 902E (Materials Research Society, Warrendale, 2007), pp. T10-55.1 – T10-55.6.

218. A. Petraru, V. Nagarajan, H. Kohlstedt, R. Ramesh, D.G. Schlom, and R. Washer, “Simultaneous measurement of the piezoelectric and dielectric response of nanoscale ferroelectric capacitors by an atomic force microscopy based approach,” Applied Physics A 84 (2006) 67-71.

217. E.M. Campo, S. Nakahara, T. Hierl, J.C.M. Hwang, Y.P. Chen, G. Brill, N.K. Dhar, V. Vaithyanathan, D.G. Schlom, X.-M. Fang, and J.M. Fastenau, “Epitaxail Growth of CdTe on Si through Perovskite Oxide Buffers,” Journal of Electronic Materials 35 (2006) 1219-1223.

216. D.M. Kim, C.B. Eom, V. Nagarajan, J. Ouyang, R. Ramesh, V. Vaithyanathan, and D.G. Schlom, “Thickness Dependence of Structural and Piezoelectric Properties of Epitaxial Pb(Zr_0.52Ti_0.48)O₃ films on Si and SrTiO3 Substrates,” Applied Physics Letters 88 (2006) 142904-1 – 142904-3.

215. T. Heeg, J. Schubert, C. Buchal, E. Cicerrella, J.L. Freeouf, W. Tian, Y. Jia, and D.G. Schlom, “Growth and Properties of Epitaxial Rare-Earth Scandate Thin Films,” Applied Physics A 83 (2006) 103-106.

214. L.F. Edge, D.G. Schlom, P. Sivasubramani, R.M. Wallace, B. Holländer, and J. Schubert, “Electrical Characterization of Amorphous Lanthanum Aluminate Thin Films Grown by Molecular Beam Deposition on Silicon,” Applied Physics Letters 88 (2006) 112907-1 – 112907-3.

213. P. Irvin, J. Levy, J.H. Haeni, and D.G. Schlom, “Localized Microwave Resonances in Strained SrTiO₃ Thin Films,” Applied Physics Letters 88 (2006) 042902-1 – 042902-3.

212. V.V. Afanas’ev, A. Stesmans, L.F. Edge, D.G. Schlom, T. Heeg, and J. Schubert, “Band Alignment between (100) Si and Amorphous LaAlO₃, LaScO₃, and Sc₂O₃: Atomically Abrupt versus Interlayer-Containing Interfaces,” Applied Physics Letters 88 (2006) 032104-1 – 032104-3.

211. Z. Ma, F. Zavaliche, L. Chen, J. Ouyang, J. Melngailis, A.L. Roytburd, V. Vaithyanathan, D.G. Schlom, T. Zhao, and R. Ramesh, “Effect of 90° Domain Movement on the Piezoelectric Response of Patterned PbZr_0.2Ti_0.8O₃/SrTiO₃/Si Heterostructures,” Applied Physics Letters 87 (2005) 072907-1 – 072907-3.

210. A. Venimadhav, A. Soukiassian, D.A. Tenne, Q. Li, X.X. Xi, D.G. Schlom, R. Arroyave, Z.K. Liu, H.P. Sun, X.Q. Pan, M.Y. Lee, and N.P. Ong, “Structural and Transport Properties of Epitaxial Na_xCoO₂ Thin Films,” Applied Physics Letters 87 (2005) 172104-1 – 172104-3.

209. O. Guise, J.T. Yates, Jr., J. Levy, J. Ahner, V. Vaithyanathan, and D.G. Schlom, “Patterning of Sub-10-nm Ge Islands on Si(100) by Directed Self-Assembly”, Applied Physics Letters 87 (2005) 171902-1 – 171902-3.

208. S.Y. Yang, F. Zavaliche, L. Mohaddes-Ardabili, V. Vaithyanathan, D.G. Schlom, Y.J. Lee, Y.H. Chu, M.P. Cruz, Q. Zhan, T. Zhao, and R. Ramesh, “Metalorganic Chemical Vapor Deposition of Lead-Free Ferroelectric BiFeO₃ Films for memory Applications,” Applied Physics Letters 87 (2005) 072907-1 – 072907-3.

207. E. Cicerrella, J.L. Freeouf, L.F. Edge, D.G. Schlom, T. Heeg, J. Schubert, and S.A. Chambers, “Optical Properties of La-Based High-k Dielectric Films,” Journal of Vacuum Science and Technology A 23 (2005) 1676-1680.

206. F. Zavaliche, H. Zheng, L. Mohaddes-Ardabili, S.Y. Yang, Q. Zhan, P. Shafer, E. Reilly, R. Chopdekar, Y. Jia, P. Wright, D.G. Schlom, Y. Suzuki, and R. Ramesh, “Electric Field-Induced Magnetization Switching in Epitaxial Columnar Nanostructures,” Nano Letters 5 (2005) 1793-1796.

205. G. Lucovsky, C.C. Fulton, Y. Zhang, J. Luning, L.F. Edge, J.L. Whitten, R.J. Nemanich, D.G. Schlom, and V.V. Afanas’ev, “Conduction Band-Edge d-State in High-k Dielectrics due to Jahn–Teller Term Splittings,” Thin Solid Films 486 (2005) 129-135.

204. P.J. Hansen, V. Vaithyanathan, Y. Wu, T. Mates, S. Heikman, U.K. Mishra, R.A. York, D.G. Schlom, and J.S. Speck, “Rutile Films Grown by Molecular Beam Epitaxy on GaN and AlGaN/GaN,” Journal of Vacuum Science and Technology B 23 (2005) 499-506.

203. P. Sivasubramani, P. Zhao, M.J. Kim, B.E. Gnade, R.M. Wallace, L.F. Edge, D.G. Schlom, G.N. Parsons, and V. Misra, “Thermal Stability Studies of Advanced Gate Stack Structures on Si (100),” in Characterization and Metrology for ULSI Technology 2005 edited by D.G. Seiler, A.C. Diebold, R. McDonald, C.R. Ayre, R.P. Khosla, S. Zollner, and E.M. Secula, AIP Vol. 788 (Springer, New York, 2005), pp. 156-160.

202. T. Bauer, S. Gsell, M. Schreck, J. Goldfuß, J. Lettieri, D.G. Schlom, and B. Stritzker, “Growth of Epitaxial Diamond on Silicon via Iridium/SrTiO₃ Buffer Layers,” Diamond & Related Materials 14 (2005) 314-317.

201. W. Chang, S.W. Kirchoefer, J.A. Bellotti, S.B. Qadri, J.M. Pond, J.H. Haeni, and D.G. Schlom, “In-Plane Anisotropy in the Microwave Dielectric Properties of SrTiO₃ Films,” Journal of Applied Physics 98 (2005) 024107-1 – 024107-7.

200. B.T. Liu, X.X. Xi, V. Vaithyanathan, and D.G. Schlom, “MgB₂ Thin Films Grown at Different Temperatures by Hybrid Physical-Chemical Vapor Deposition,” IEEE Transactions on Applied Superconductivity 15 (2005) 3249-3252.

199. A.V. Pogrebnyakov, J.M. Redwing, J.E. Giencke, C.B. Eom, V. Vaithyanathan, D.G. Schlom, A. Soukiassian, S.B. Mi, C.L. Jia, J. Chen, Y.F. Hu, Y. Cui, Qi Li, and X.X. Xi, “Carbon-Doped MgB₂ Thin Films Grown by Hybrid Physical-Chemical Vapor Deposition,” IEEE Transactions on Applied Superconductivity 15 (2005) 3321-3324.

198. P. Orgiani, Y. Cui, A.V. Pogrebnyakov, J.M. Redwing, V. Vaithyanathan, D.G. Schlom, and X.X. Xi, “Investigations of MgB₂ / MgO and MgB₂ / AlN Heterostructures for Josephson Devices,” IEEE Transactions on Applied Superconductivity 15 (2005) 228-231.

197. J. Mannhart and D.G. Schlom, “Oxide—Tausendsassa für die Elektronik,” Physik Journal 4 (2005) 45-51.

196. P. Sivasubramani, M.J. Kim, B.E. Gnade, R.M. Wallace, L.F. Edge, D.G. Schlom, H.S. Craft, and J.-P. Maria, “Outdiffusion of La and Al from Amorphous LaAlO₃ in Direct Contact with Si (001),” Applied Physics Letters 86 (2005) 201901-1 – 201901-3.

195. J.Q. He, C.L. Jia, V. Vaithyanathan, D.G. Schlom, J. Schubert, A. Gerber, H.H. Kohlstedt, and R.H. Wang, “Interfacial Reaction in the Growth of Epitaxial SrTiO₃ Thin Films on (001) Si Substrates,” Journal of Applied Physics 97 (2005) 104921-1 - 104921-6.

194. G. Lucovsky, J.G. Hong, C.C. Fulton, N.A. Stoute, Y. Zou, R.J. Nemanich, D.E. Aspnes, H. Ade, and D.G. Schlom, “Conduction Band States of Transition Metal (TM) High-k Gate Dielectrics as Determined from X-ray Absorption Spectra,” Microelectronics Reliability 45 (2005) 827–830.

193. M.D. Biegalski, J.H. Haeni, S. Trolier-McKinstry, D.G. Schlom, C.D. Brandle, and A.J. Ven Graitis, “Thermal Expansion of the new perovskite substrates DyScO₃ and GdScO₃,” Journal of Materials Research 20 (2005) 952-958.

192. C. Zhao, T. Witters, B. Brijs, H. Bender, O. Richard, M. Caymax, T. Heeg, J. Schubert, V. V. Afanas’ev, A. Stesmans, and D.G. Schlom, “Ternary Rare-Earth Metal Oxide High-k Layers on Silicon Oxide,” Applied Physics Letters 86 (2005) 132903-1 - 132903-3.

191. G. Lucovsky, C.C. Fulton, Y. Zhang, Y. Zou, J. Luning, L.F. Edge, J.L. Whitten, R.J. Nemanich, H. Ade, D.G. Schlom, V.V. Afanase’v, A. Stesmans, S. Zollner, D. Triyoso, and B.R. Rogers, “Conduction Band-Edge States Associated With the Removal of d-State Degeneracies by the Jahn–Teller Effect,” IEEE Transactions on Device and Materials Reliability 5 (2005) 65-83.

190. D.O. Klenov, L.F. Edge, D.G. Schlom, and S. Stemmer, “Extended Defects in Epitaxial Sc₂O₃ Films Grown on (111) Si,” Applied Physics Letters 86 (2005) 051901-1 - 051901-3.

189. D.O. Klenov, D.G. Schlom, H. Li, and S. Stemmer, “The Interface between Single Crystalline (001) LaAlO₃ and (001) Silicon,” Japanese Journal of Applied Physics 44 (2005) L617-L619.

188. V.V. Afanas’ev, A. Stesmans, C. Zhao, M. Caymax, T. Heeg, J. Schubert, Y. Jia, D.G. Schlom, and G. Lucovsky, “Band Alignment between (100)Si and Complex Rare-Earth/Transition Metal Oxides,” Applied Physics Letters 85 (2004) 5917-5919.

187. W. Chang, S.W. Kirchoefer, J.M. Pond, J.A. Bellotti, S.B. Qadri, J.H. Haeni, and D.G. Schlom, “Room-Temperature Tunable Microwave Properties of Strained SrTiO₃ Films,” Journal of Applied Physics 96 (2004) 6629-6633.

186. K.J. Choi, M. Biegalski, Y.L. Li, A. Sharan, J. Schubert, R. Uecker, P. Reiche, Y.B. Chen, X.Q. Pan, V. Gopalan, L.-Q. Chen, D.G. Schlom, and C.B. Eom, “Enhancement of Ferroelectricity in Strained BaTiO₃ Thin Films,” Science 306 (2004) 1005-1009.

185. F.S. Aguirre-Tostado, A. Herrera-Gómez, J.C. Woicik, R. Droopad, Z. Yu, D.G. Schlom, P. Zschack, E. Karapetrova, P. Pianetta, and C.S. Hellberg, “Elastic Anomaly for SrTiO₃ Thin Films Grown on Si(001),” Physical Review B 70 (2004) 201403-1 - 201403-4.

184. A.V. Pogrebnyakov, J.M. Redwing, S. Raghavan, V. Vaithyanathan, D.G. Schlom, S.Y. Xu, Q. Li, D.A. Tenne, A. Soukiassian, X.X. Xi, M.D. Johannes, D. Kasinathan, W.E. Pickett, J.S. Wu, and J.C.H. Spence, “Enhancement of Superconducting Transition Temperature of MgB2 by a Strain-Induced Bond-Stretching Mode Softening,” Physical Review Letters 93 (2004) 147006-1 - 147006-4.

183. W. Chang, S.W. Kirchoefer, J.A. Bellotti, J.M. Pond, D.G. Schlom, and J.H. Haeni, “(Ba,Sr)TiO₃ Ferroelectric Thin Films for Tunable Microwave Applications,” Revista Mexicana de Física 50 (2004) 501-505.

182. H. Zheng, J. Wang, L. Mohaddes-Ardabili, M. Wuttig, L. Salamanca-Riba, D.G. Schlom, and R. Ramesh, “Three-Dimensional Heteroepitaxy in Self-Assembled BaTiO₃-CoFe₂O₄ Nanostructures,” Applied Physics Letters 85 (2004) 2035-2037.

181. H.P. Sun, W. Tian, X.Q. Pan, J.H. Haeni, and D.G. Schlom, “Structural Evolution of Dislocation Half-Loops in Epitaxial BaTiO₃ Thin Films during High Temperature Annealing,” Applied Physics Letters 85, (2004) 1967-1969.

180. A.V. Pogrebnyakov, X.X. Xi, J.M. Redwing, V. Vaithyanathan, D.G. Schlom, A. Soukiassian, S.B. Mi, C.L. Jia, J.E. Giencke, C.B. Eom, J. Chen, Y.F. Hu, Y. Cui, and Q. Li, “Properties of MgB2 Thin Films with Carbon Doping,” Applied Physics Letters 85 (2004) 2017-2019; A.V. Pogrebnyakov, X.X. Xi, J.M. Redwing, V. Vaithyanathan, D.G. Schlom, A. Soukiassian, S.B. Mi, C.L. Jia, J.E. Giencke, C.B. Eom, J. Chen, Y.F. Hu, Y. Cui, and Q. Li,  “Erratum:  ‘Properties of MgB2 Thin Films with Carbon Doping,’ [Appl. Phys. Lett. 85, 2017 (2004)],” Applied Physics Letters 88 (2006) 209903-1.

179. J.H. Haeni, P. Irvin, W. Chang, R. Uecker, P. Reiche, Y. Li, W. Tian, M.E. Hawley, B. Craigo, A.K. Tagantsev, X.Q. Pan, S.K. Streiffer, L.Q. Chen, S. Kirchoefer, J. Levy, and D.G. Schlom, “Room-Temperature Ferroelectricity in Strained SrTiO₃,” Nature 430 (2004) p 758-751.

178. J. Mannhart and D.G. Schlom, “The Value of Seeing Nothing,” Nature 430 (2004) 620.

177. L. Mohaddes-Ardabili, H. Zheng, S.B. Ogale, B. Hannoyer, W. Tian, J. Wang, S.E. Lofland, S.R. Shinde, T. Zhao, Y. Jia, L. Salamanca-Riba, D.G. Schlom, M. Wuttig, and R. Ramesh, “Self-assembled Single-crystal Ferromagnetic Iron Nanowires formed by Decomposition,” Nature Materials 3 (2004) 533.

176. D.M. Schaadt, E.T. Yu, V. Vaithyanathan, and D.G. Schlom, “Nanoscale Current Transport in Epitaxial SrTiO₃ on n⁺-Si investigated with Conductive Atomic Force Microscopy,” Journal of Vacuum Science and Technology B 22 (2004) 2030-2034.

175. F.S. Aguirre-Tostado, A. Herrera-Gómez, J.C. Woicik, R. Droopad, Z. Yu, D.G. Schlom, J. Karapetrova, P. Zschack, and P. Pianetta, “Displacive Phase Transition in SrTiO₃ Thin Films Grown on Si(001),” Journal of Vacuum Science and Technology A 22 (2004) 1356-1360.

174. L.F. Edge, D.G. Schlom, R.T. Brewer, Y.J. Chabal, J.R. Williams, S.A. Chambers, C. Hinkle, G. Lucovsky, Y. Yang, S. Stemmer, M. Copel, B. Holländer, and J. Schubert, “Suppression of Subcutaneous Oxidation during the Deposition of Amorphous Lanthanum Aluminate on Silicon,” Applied Physics Letters 84 (2004) 4629-4631.

173. A. Sharan, J. Lettieri, Y. Jia, W. Tian, X.Q. Pan, D.G. Schlom, and V. Gopalan, “Bismuth Manganite: A Multiferroic with a Large Nonlinear Optical Response,” Physical Review B 69 (2004) 214109-1-214109-7.

172. Y.L. Li, L.Q. Chen, G. Asayama, D.G. Schlom, M.A. Zurbuchen, and S.K. Streiffer, “Ferroelectric Domain Structures in SrBi₂Nb₂O₉ Epitaxial Thin Films: Electron Microscopy and Phase-Field Simulations,” Journal of Applied Physics 95 (2004) 6332-6340.

171. C.M. Osburn, A. Kingon, G. Lucovsky, J.P. Maria, V. Misra, G. Parsons, S.A. Campbell, E. Eisenbraun, E. Garfunkel, T. Gustafson, D.L. Kwong, J. Lee, T.P. Ma, D. Schlom, and S. Stemmer, “Materials and Processes for High-k Gate Stacks,” Semiconductor Fabtech 22 (2004) 1-4.

170. D.A. Tenne, X.X. Xi, Y.L. Li, L.Q. Chen, A. Soukiassian, M.H. Zhu, A.R. James, J. Lettieri, D.G. Schlom, W. Tian, and X.Q. Pan, “Absence of Low-Temperature Phase Transitions in Epitaxial BaTiO₃ Thin Films,” Physical Review B 69, (2004) 174101-1 - 174101-5.

169. G. Lucovsky, J.G. Hong, C.C. Fulton, Y. Zou, R.J. Nemanich, H. Ade, D.G. Schlom, and J.L. Freeouf, “Spectroscopic Studies of Metal High-k Dielectrics: Transition Metal Oxides and Silicates, and Complex Rare Earth/Transition Metal Oxides,” Physica Status Solidi (b) 241 (2004) 2221-2235.

168. H.P. Sun, W. Tian, X.Q. Pan, J.H. Haeni, and D.G. Schlom, “Evolution of Dislocation Arrays in Epitaxial BaTiO₃ Thin Films Grown on (100) SrTiO₃,” Applied Physics Letters 84 (2004) 3298-3300.

167. G. Lucovsky, Y. Zhang, J.L. Whitten, D.G. Schlom, and J.L. Freeouf, “Separate and Independent Control of Interfacial Band Alignments and Dielectric Constants in Transition Metal Rare Earth Complex Oxides,” Microelectronic Engineering 72 (2004) 288-293.

166. X.X. Xi, A.V. Pogrebnyakov, X.H. Zeng, J.M. Redwing, S.Y. Xu, Q. Li, Z.K. Liu, J. Lettieri, V. Vaithyanathan, D.G. Schlom, H.M. Christen, H.Y. Zhai, and A. Goyal, “Progress in the Deposition of MgB2 Thin Films,” Superconductor Science and Technology 17 (2004) S196-S201 and in: Applied Superconductivity 2003:  Proceedings of the Sixth European Conference on Applied Superconductivity, IOP Vol. 181 (Institute of Physics, Bristol, 2004), pp. 37-44.

165. G. Lucovsky, Y. Zhang, J.L. Whitten, D.G. Schlom, and J.L. Freeouf, “Spectroscopic Studies of the Electrical Structure of Transition Metal and Rare Earth Complex Oxides,” Physica E 21 (2004) 712-716.

164. L.F. Edge, D.G. Schlom, S.A. Chambers, E. Cicerrella, J.L. Freeouf, B. Holländer, and J. Schubert, “Measurement of the Band Offsets between Amorphous LaAlO₃ and Silicon,” Applied Physics Letters 84 (2004) 726-728.

163. H. Zheng, J. Wang, S.E. Lofland, Z. Ma, L. Mohaddes-Ardabili, T. Zhao, L. Salamanca-Riba, S.R. Shinde, S.B. Ogale, F. Bai, D. Viehland, Y. Jia, D.G. Schlom, M. Wuttig, A. Roytburd, and R. Ramesh, “Multiferroic BaTiO₃-CoFe₂O₄ Nanostructures,” Science 303 (2004) 661-663.

162. A.F. Moreira dos Santos, A.K. Cheetham, W. Tian, X.Q. Pan, Y. Jia, N.J. Murphy, J. Lettieri, and D.G. Schlom, “Epitaxial Growth and Properties of Metastable BiMnO₃ Thin Films,” Applied Physics Letters 84 (2004) 91-93.

161. A. Sharan, I. An, C. Chen, R.W. Collins, J. Lettieri, Y. Jia, D.G. Schlom, and V. Gopalan, “Large Optical Nonlinearities in BiMnO₃ Thin Films,” Applied Physics Letters 83 (2003) 5169-5171.

160. M.A. Zurbuchen, Y. Jia, S. Knapp, A.H. Carim, D.G. Schlom, and X.Q. Pan, “Defect Generation by Preferred Nucleation in Epitaxial Sr₂RuO₄ / LaAlO₃,” Applied Physics Letters 83 (2003) 3891-3893.

159. X.X. Xi, X.H. Zeng, A.V. Pogrebnyakov, A. Soukiassian, S.Y. Xu, Y.F. Hu, E. Wertz, Q. Li, Y. Zhong, C.O. Brubaker, Z. K. Liu. E.M. Lysczek, J.M. Redwing, J. Lettieri, D.G. Schlom, W. Tian, H.P. Sun, and X.Q. Pan, “Deposition and Properties of Superconducting MgB₂ Thin Films,” Journal of Superconductivity 16 (2003) 801-806.

158. X.Q. Pan, J.C. Jiang, C.D. Theis, and D.G. Schlom, “Domain Structure of Epitaxial Bi₄Ti₃O₁₂ Thin Films Grown on (001) SrTiO₃ Substrates,” Applied Physics Letters 83 (2003) 2315-2317.

157. J. Lettieri, V. Vaithyanathan, S.K. Eah, J. Stephens, V. Sih, D.D. Awschalom, J. Levy, and D.G. Schlom, “Epitaxial Growth and Magnetic Properties of EuO on (001) Si by Molecular-Beam Epitaxy,” Applied Physics Letters 83 (2003) 975-977.

156. M.A. Zurbuchen, J. Lettieri, S.J. Fulk, Y. Jia, A.H. Carim, D.G. Schlom, and S.K. Streiffer, “Bismuth Volatility Effects on the Perfection of SrBi₂Nb₂O₉ and SrBi₂Ta₂O₉ Films,” Applied Physics Letters 82 (2003) 4711-4713.

155. A.V. Pogrebnyakov, J.M. Redwing, J.E. Jones, X.X. Xi, S.Y. Xu, Q. Li, V. Vaithyanathan, and D.G. Schlom, “Thickness Dependence of the Properties of Epitaxial MgB₂ Thin Films Grown by Hybrid Physical-Chemical Vapor Deposition,” Applied Physics Letters 82 (2003) 4319-4321.

154. X.X. Xi, X.H. Zeng, S.Y. Xu, Q. Li, Y. Zhong, C.O. Brubaker, Z. K. Liu, E.M. Lysczek, J.M. Redwing, J. Lettieri, D.G. Schlom, W. Tian, and X.Q. Pan, “In Situ Growth of MgB₂ Thin Film by Hybrid Physical-Chemical Vapor Deposition,” IEEE Transactions on Applied Superconductivity 13 (2003) 3233-3237.

153. J. Schubert, O. Trithaveesak, A. Petraru, C.L. Jia, R. Uecker, P. Reiche, and D.G. Schlom, “Structural and Optical Properties of Epitaxial BaTiO₃ Thin Films Grown on GdScO₃(110),” Applied Physics Letters 82 (2003) 3460-3462.

152. A. Schmehl, F. Lichtenberg, H. Bielefeldt, J. Mannhart, and D.G. Schlom, “Transport Properties of LaTiO_3+x Films and Heterostructures,” Applied Physics Letters 82 (2003) 3077-3079.

151. J. Wang, J.B. Neaton, H. Zheng, V. Nagarajan, S.B. Ogale, B. Liu, D. Viehland, V. Vaithyanathan, D.G. Schlom, U.V. Waghmare, N.A. Spaldin, K.M. Rabe, M. Wuttig, and R. Ramesh, “Epitaxial BiFeO₃ Multiferroic Thin Film Heterostructures,” Science 299 (2003) 1719-1722.

150. X.H. Zeng, A.V. Pogrebnyakov, M.H. Zhu, J.E. Jones, X.X. Xi, S.Y. Xu, E. Wertz, Q. Li, J.M. Redwing, J. Lettieri, V. Vaithyanathan, D.G. Schlom, Z. K. Liu, O. Trithaveesak, and J. Schubert, “Superconducting MgB₂ Thin Films on Silicon Carbide Substrates by Hybrid Physical-Chemical Vapor Deposition,” Applied Physics Letters 82 (2003) 2097-2099.

149. S.D. Bu, D.M. Kim, J.H. Choi, J. Giencke, E.E. Hellstrom, D.C. Larbalestier, S. Patnaik, L. Cooley, C.B. Eom, J. Lettieri, D.G. Schlom. W. Tian, and X.Q. Pan, “Synthesis and Properties of c axis Oriented Epitaxial MgB₂ Thin Films,” Applied Physics Letters 81 (2002) 1851-1853.

148. X.H. Zeng, A.V. Pogrebnyakov, A. Kotcharov, J.E. Jones, X.X. Xi, E.M. Lysczek, J.M. Redwing, S.Y. Xu, Q. Li, J. Lettieri, D.G. Schlom, W. Tian, X.Q. Pan, and Z. K. Liu, “In Situ Epitaxial MgB₂ Thin Films for Superconducting Electronics,” Nature Materials 1 (2002) 35-38.

147. H.P. Sun, W. Tian, J.H. Haeni, D.G. Schlom, and X.Q. Pan, “Strain Relaxation by Misfit Dislocations in Nanoscale Epitaxial Ferroelectric BaTiO₃ Films Grown on SrTiO₃ Substrate,” Microscopy and Microanalysis 8 (supplement 2, Proceedings: Microscopy & Microanalysis 2002) (2002) 1162-1163.

146. J. Lettieri, J.H. Haeni, and D.G. Schlom, “Critical Issues in the Heteroepitaxial Growth of Alkaline-Earth Oxides on Silicon,” Journal of Vacuum Science and Technology A 20 (2002) 1332-1340.

145. B.T. Liu, K. Maki, Y. So, V. Nagarajan, R. Ramesh, J. Lettieri, J.H. Haeni, D.G. Schlom, W. Tian, X.Q. Pan, F.J. Walker, and R.A. McKee, “Epitaxial La doped SrTiO₃ on Silicon: A Conductive Template for Epitaxial Ferroelectrics on Silicon,” Applied Physics Letters 80 (2002) 4801-4803.

144. R. Ramesh and D.G. Schlom, “Orienting Ferroelectric Films,” Science 296 (2002) 1975-1976.

143. G. Asayama, J. Lettieri, M.A. Zurbuchen, Y. Jia, S. Trolier-McKinstry, D.G. Schlom, S.K. Streiffer, J-P. Maria, S.D. Bu, and C.B. Eom, “Growth of (103) Fiber-Textured SrBi₂Nb₂O₉ Films on Pt-Coated Silicon,” Applied Physics Letters 80 (2002) 2371-2373.

142. S-G. Lim, S. Kriventsov, T.N. Jackson, J.H. Haeni, D.G. Schlom, A.M. Balbashov, R. Uecker, P. Reiche, J.L. Freeouf, and G. Lucovsky, “Dielectric Functions and Optical Bandgaps of High K Dielectrics for Metal-Oxide-Semiconductor Field-Effect Transistors by Far Ultraviolet Spectroscopic Ellipsometry,” Journal of Applied Physics 91 (2002) 4500-4505.

141. B.J. Gibbons, C.B. Eom, R.A. Rao, S. Trolier-McKinstry, and D.G. Schlom, “Oxidation of c axis-Oriented Epitaxial YBa₂Cu₃O_7-d Thin Films in Ozone-Containing Atmospheres,” Journal of Materials Research 17 (2002) 884-889.

140. M.A. Zurbuchen, G. Asayama, D.G. Schlom, and S.K. Streiffer, “Ferroelectric Domain Structure of SrBi₂Nb₂O₉ Epitaxial Thin Films,” Physical Review Letters 88 (2002) 107601-1-107601-4.

139. X.X. Xi, X.H. Zeng, A. Soukiassian, J. Jones, J. Hotchkiss,Y. Zhong, C.O. Brubaker, Z. K. Liu, J. Lettieri, D.G. Schlom,Y.F. Hu, E. Wertz, Q. Li, W. Tian, H.P. Sun, and X.Q. Pan, “Thermodynamics and Thin Film Deposition of MgB2 Superconductors,” Superconductor Science and Technology 15 (2002) 451-457.

138. D.G. Schlom and J.H. Haeni, “A Thermodynamic Approach to Selecting Alternative Gate Dielectrics,” MRS Bulletin 27 (2002) 198-204.

137. W. Tian, J.H. Haeni, D.G. Schlom, and X.Q. Pan, “Strain-Induced Elevation of the Spontaneous Polarization in BaTiO₃ Thin Films,” in: Ferroelectric Thin Films IX, edited by P.C. McIntyre, S.R. Gilbert, Y. Miyasaka, R.W. Schwartz, and D. Wouters, Vol. 655 (Materials Research Society, Warrendale, 2001), pp. CC7.8.1-CC7.8.6.

136. D.G. Schlom, J.H. Haeni, J. Lettieri, C.D. Theis, W. Tian, J.C. Jiang, and X.Q. Pan, “Oxide Nano-Engineering using MBE,” Materials Science & Engineering B 87 (2001) 282-291.

135. Y. Barad, J. Lettieri, C.D. Theis, D.G. Schlom, and V. Gopalan, “Domain Rearrangement in Ferroelectric Bi₄Ti₃O₁₂ Thin Films Studied by in situ Optical Second Harmonic Generation,” Journal of Applied Physics 90 (2001) 3497-3503.

134. X.H. Zeng, A. Sukiasyan, X.X. Xi, Y.F. Hu, E. Wertz, Q. Li, W. Tian, H.P. Sun, X.Q. Pan, J. Lettieri, D.G. Schlom, C.O. Brubaker, Z. K. Liu, and Q. Li, “Superconducting Properties of Nanocrystalline MgB2 Thin films Made by an in situ Annealing Process,” Applied Physics Letters 79 (2001) 1840-1842.

133. M.A. Zurbuchen, D.G. Schlom, and S.K. Streiffer, “Comment on ‘High-resolution electron microscopy investigations on stacking faults in SrBi₂Ta₂O₉ ferroelectric thin films’ [Appl. Phys. Lett. 78, 973 (2001)],” Applied Physics Letters 79 (2001) 887-888.

132. Z-K. Liu, D.G. Schlom, Q. Li, and X.X. Xi, “Thermodynamics of the Mg-B System: Implications for the Deposition of MgB₂ Thin Films,” Applied Physics Letters 78 (2001) 3678-3680.

131. W. Tian, X.Q. Pan, J.H. Haeni, and D.G. Schlom, “Transmission Electron Microscopy Study of n = 1-5 Sr_n+1Ti_nO_3n+1 Epitaxial Thin Films,” Journal of Materials Research 16 (2001) 2013-2026.

130. S. Patnaik, L.D. Cooley, A. Gurevich, A.A. Polyanskii, J. Jiang, X.Y. Cai, A.A. Squitieri, M.T. Naus, M.K. Lee, J.H. Choi, L. Belenky, S.D. Bu, J. Lettieri, X. Song, D.G. Schlom, S.E. Babcock, C.B. Eom, E.E. Hellstrom, and D.C. Larbalestier, “Electronic Anisotropy, Magnetic Field-Temperature Phase Diagram and their Dependence on Resistivity in c Axis Oriented MgB₂ Thin Films,” Superconductor Science and Technology 14 (2001) 315-319.

129. Z-K. Liu, Y. Zhong, D.G. Schlom, X.X. Xi, and Q. Li, “Computational Thermodynamic Modeling of the Mg-B System,” Calphad 25 (2001) 299-303.

128. J.H. Haeni, C.D. Theis, D.G. Schlom, W. Tian, X.Q. Pan, H. Chang, I. Takeuchi, and X. D. Xiang, “Epitaxial Growth of the First Five Members of the Sr_n+1Ti_nO_3n+1 Ruddlesden-Popper Homologous Series,” Applied Physics Letters 78 (2001) 3292-3294.

127. M.A. Zurbuchen, Y. Jia, S. Knapp, A.H. Carim, D.G. Schlom, L. N. Zou, and Y. Liu, “Suppression of Superconductivity by Crystallographic Defects in Epitaxial Sr₂RuO₄ Films,” Applied Physics Letters 78 (2001) 2351-2353.

126. B.J. Gibbons, M.E. Hawley, S. Trolier-McKinstry, and D.G. Schlom, “Real-Time Spectroscopic Ellipsometry as a Characterization Tool for Oxide Molecular Beam Epitaxy,” Journal of Vacuum Science and Technology A 19 (2001) 584-590.

125. M.A. Zurbuchen, J. Lettieri, Y. Jia, D.G. Schlom, S.K. Streiffer, and M.E. Hawley, “Transmission Electron Microscopy Study of (103)-Oriented Epitaxial SrBi₂Nb₂O₉ Films Grown on (111) SrTiO₃ and (111) SrRuO₃ / (111) SrTiO₃,” Journal of Materials Research 16 (2001) 489-502.

124. M.A. Zurbuchen, J. Lettieri, S.K. Streiffer, Y. Jia, M.E. Hawley, X.Q. Pan, A.H. Carim, and D.G. Schlom, “Microstructure and Electrical Properties of Epitaxial SrBi₂Nb₂O₉ and SrBi₂Ta₂O₉ Films,” Integrated Ferroelectrics 33 (2001) 27-37.

123. M.K. Lee, C.B. Eom, J. Lettieri, I.W. Scrymgeour, D.G. Schlom, W. Tian, X.Q. Pan, P.A. Ryan, and F. Tsui, “Epitaxial Thin Films of Hexagonal BaRuO₃ on (001) SrTiO3,” Applied Physics Letters 78 (2001) 329-331.

122. Y. Barad, J. Lettieri, C.D. Theis, D.G. Schlom, V. Gopalan, J.C. Jiang, and X.Q. Pan, “Probing Domain Microstructure in Ferroelectric Bi₄Ti₃O₁₂ Thin Films by Optical Second Harmonic Generation,” Journal of Applied Physics 89 (2001) 1387-1392; Y. Barad, J. Lettieri, C.D. Theis, D.G. Schlom, V. Gopalan, J.C. Jiang, and X.Q. Pan, “Erratum: ‘Probing Domain Microstructure in Ferroelectric Bi4Ti3O12 Thin Films by Optical Second Harmonic Generation,’ [J. Appl. Phys. 89, 1387 (2001)],” Journal of Applied Physics 89 (2001) 5230.

121. W. Tian, J.C. Jiang, J.H. Haeni, D.G. Schlom, and X.Q. Pan, “Strained BaTiO₃ / SrTiO₃ Superlattice Grown by Reactive Molecular Beam Epitaxy,” Microscopy and Microanalysis 6 (supplement 2, Proceedings: Microscopy & Microanalysis 2000) (2000) 400-401.

120. D.G. Schlom, J.H. Haeni, C.D. Theis, W. Tian, X.Q. Pan, G.W. Brown, and M.E. Hawley, “The Importance of in situ Monitors in the Preparation of Layered Oxide Heterostructures by Reactive MBE,” in: Recent Developments in Oxide and Metal Epitaxy—Theory and Experiment, edited by M. Yeadon, S. Chiang, R.F.C. Farrow, J.W. Evans, and O. Auciello, Vol. 619 (Materials Research Society, Warrendale, 2000), pp. 105-114.

119. J. Lettieri, Y. Jia, S.J. Fulk, D.G. Schlom, M.E. Hawley, and G.W. Brown, “Optimization of the Growth of Epitaxial SrBi₂Ta₂O₉ Thin Films by Pulsed Laser Deposition,” Thin Solid Films 379 (2000) 64-71.

118. J. Lettieri, M.A. Zurbuchen, Y. Jia, D.G. Schlom, S.K. Streiffer, and M.E. Hawley, “Epitaxial Growth of SrBi₂Nb₂O₉ on (110) SrTiO3 and the Establishment of a Lower Bound on the Spontaneous Polarization of SrBi₂Nb₂O₉,” Applied Physics Letters 77 (2000) 3090-3092.

117. J. Lettieri, I.W. Scrymgeour, D.G. Schlom, M.K. Lee, and C.B. Eom, “Comment on ‘Lattice Deformation and Magnetic Properties in Epitaxial Thin Films of Sr_1-xBa_xRuO₃’ [Appl. Phys. Lett. 73, 1200 (1999)],” Applied Physics Letters 77 (2000) 600-601.

116. J.H. Haeni, C.D. Theis, and D.G. Schlom, “RHEED Intensity Oscillations for the Stoichiometric Growth of SrTiO₃ Thin Films by Reactive Molecular Beam Epitaxy,” Journal of Electroceramics 4 (2000) 385-391.

115. G.W. Brown, M.E. Hawley, C.D. Theis, J. Yeh, and D.G. Schlom, “Atomic Force Microscopy Examination of the Evolution of the Surface Morphology of Bi₄Ti₃O₁₂ grown by Molecular Beam Epitaxy,” Journal of Electroceramics 4 (2000) 351-356.

114. J. Lettieri, M.A. Zurbuchen, Y. Jia, D.G. Schlom, S.K. Streiffer, and M.E. Hawley, “Epitaxial Growth of non-c-oriented SrBi₂Nb₂O₉ on (111) SrTiO₃,” Applied Physics Letters 76 (2000) 2937-2939.

113. H.S. Wang, E. Wertz, Y.F. Hu, Q. Li, and D.G. Schlom, “Role of Strain in Magnetotransport Properties of Pr_0.67Sr_0.33MnO₃ Thin Films,” Journal of Applied Physics 87 (2000) 7409-7414.

112. A.H. Carim, P. Dera, L.W. Finger, B. Mysen, C.T. Prewitt, and D.G. Schlom, “Crystal Structure and Compressibility of Ba₄Ru₃O₁₀,” Journal of Solid State Chemistry 149 (2000) 137-142.

111. K. Wasa, R. Ai, Y. Ichikawa, D.G. Schlom, S. Trolier-McKinstry, Q. Gang, and C.B. Eom, “Thin Film Effects in the Ferroelectric PbTiO₃,“ in: 1999 IEEE Ultrasonics Symposium Proceedings, edited by S.C. Schneider, M. Levy, and B.R. McAvoy, Vol. 2 (IEEE, Piscataway, 2000), pp.999-1003.

110. J. Lettieri, M.A. Zurbuchen, G.W. Brown, Y. Jia, W. Tian, X.Q. Pan, M.E. Hawley, and D.G. Schlom, “Investigation of Growth Evolution in c-Axis SrBi₂Nb₂O₉ Epitaxial Thin Films,” in: Multicomponent Oxide Films for Electronics, edited by M.E. Hawley, D.H.A. Blank, C.B. Eom, D.G. Schlom, and S.K. Streiffer, Vol. 574 (Materials Research Society, Warrendale, 1999), pp. 31-36.

109. G.W. Brown, M.E. Hawley, C.D. Thesis, J. Yeh, D.G. Schlom, “Atomic force microscopy examination of the evolution of surface morphology of Bi₄Ti₃O₁₂ grown by molecular beam epitaxy,” Thin Solid Fims 357 (1999) 13-17.

108. C.A. Billman, P.H. Tan, K.J. Hubbard, and D.G. Schlom, “Alternate Gate Oxides for Silicon MOSFETs using High K Dielectrics,” in: Ultrathin SiO₂ and High-K Materials for ULSI Gate Dielectrics, edited by H.R. Huff, C.A. Richter, M.L. Green, G. Lucovsky, and T. Hattori, Vol. 567 (Materials Research Society, Warrendale, 1999), pp. 409-414.

107. D.L. Kaiser, M.D. Vaudin, L.D. Rotter, J.E. Bonevich, I. Levin, J.T. Armstrong, A.L. Roytburd, and D.G. Schlom, “Effect of Film Composition on the Orientation of (Ba,Sr)TiO₃ Grains in (Ba,Sr)_yTiO_2+y Thin Films,” Journal of Materials Research 14 (1999) 4657-4666.

106. W. Tian, J.C. Jiang, X.Q. Pan, J.H. Haeni, and D.G. Schlom, “Atomic Structure of Epitaxial Thin Films of the Sr_n+1Ti_nO_3n+1 Ruddlesden-Popper Homologous Series,” Microscopy and Microanalysis 5 (supplement 2, Proceedings: Microscopy & Microanalysis ’99) (1999) 114-115.

105. J.C. Jiang, W. Tian, C.D. Theis, D.G. Schlom, and X.Q. Pan, “Effect of the Substrate Surface Termination on the Structure of the Bi₄Ti₃O₁₂ / SrTiO₃ Interface,” Microscopy and Microanalysis 5 (supplement 2, Proceedings: Microscopy & Microanalysis ’99) (1999) 104-105.

104. Y. Jia, M.A. Zurbuchen, S. Wozniak, A.H. Carim, D.G. Schlom, L N. Zou, S. Briczinski, and Y. Liu, “Epitaxial Growth of Metastable Ba₂RuO₄ Films with the K₂NiF₄ Structure,” Applied Physics Letters 74 (1999) 3830-3832.

103. D.J. Gundlach, T.N. Jackson, D.G. Schlom, and S.F. Nelson, “Solvent-Induced Phase Transition in Thermally Evaporated Pentacene Films,” Applied Physics Letters 74 (1999) 3302-3304.

102. J.C. Jiang, X.Q. Pan, W. Tian, C.D. Theis, and D.G. Schlom, “Abrupt PbTiO₃/SrTiO₃ Superlattices Grown by Reactive Molecular Beam Epitaxy,” Applied Physics Letters 74 (1999) 2851-2853.

101. K. Wasa, Y. Ichikawa, H. Adachi, I. Kanno, K. Setsune, D.G. Schlom, S. Trolier-McKinstry, Q. Gan, and C.B. Eom, “Interfacial Structure and Ferroelectric Properties of PZT/SrRuO₃ Heterostructures on MISCUT (001)SrTiO₃,” Integrated Ferroelectrics 26 (1999) 39-46.

100. R. Jin, Yu. Zadorozhny, Y. Liu, D.G. Schlom, Y. Mori, and Y. Maeno, “Observation of Anomalous Temperature Dependence of the Critical Current in Pb/Sr₂RuO₄/Pb Junctions,” Physical Review B 59 (1999) 4433-4438.

99. K. Wasa, Y. Haneda, T. Sato, H. Adachi, I. Kanno, D.G. Schlom, S. Trolier-McKinstry, Q. Gang, and C.B. Eom, “Single Domain/Single Crystal Ferroelectric PbTiO₃ Thin Films,” in: 1998 IEEE Ultrasonics Symposium Proceedings, edited by S.C. Schneider, M. Levy, and B.R. McAvoy, Vol. 1 (IEEE, Piscataway, 1999), pp. 619-623.

98. D.G. Schlom, Y. Jia, L. N. Zou, J.H. Haeni, S. Briczinski, M.A. Zurbuchen, C.W. Leitz, S. Madhavan, S. Wozniak, Y. Liu, M.E. Hawley, G.W. Brown, A. Dabkowski, H.A. Dabkowska, R. Uecker, and P. Reiche, “Searching for superconductivity in epitaxial films of copper-free layered oxides with the K₂NiF₄ structure,” in: Superconducting and Related Oxides: Physics and Nanoengineering III, edited by D. Pavuna and I. Bozovic, SPIE Vol. 3481 (SPIE, Bellingham, 1998), pp. 226-240.

97. K. Wasa, Y. Haneda, T. Satoh, H. Adachi, I. Kanno, D.G. Schlom, S. Trolier-McKinstry, Q. Gang, and C-B. Eom, “Step-Flow Growth of Perovskite PbTiO₃ Thin Films Epitaxially Grown on a Miscut SrTiO₃ Substrate,” in: Superconducting and Related Oxides: Physics and Nanoengineering III, edited by D. Pavuna and I. Bozovic, SPIE Vol. 3481 (SPIE, Bellingham, 1998), pp. 182-189.

96. J. Lettieri, Y. Jia, M. Urbanik, C.I. Weber, J-P. Maria, D.G. Schlom, H. Li, R. Ramesh, R. Uecker, and P. Reiche, “Epitaxial Growth of (001)-Oriented and (110)-Oriented SrBi₂Ta₂O₉ Thin Films,” Applied Physics Letters 73 (1998) 2923-2925.

95. C.D. Theis, J. Yeh, D.G. Schlom, M.E. Hawley, and G.W. Brown “The Influence of Vicinal SrTiO₃ Surfaces on the Growth and Ferroelectric Properties of Epitaxial Bi₄Ti₃O₁₂ Thin Films,” Materials Science and Engineering B 56 (1998) 228-233.

94. R. Jin, Yu. Zadorozhny, Y. Liu, D.G. Schlom, F. Lichtenberg, and J.G. Bednorz, “Normal-State Magnetoresistance of Sr₂RuO₄ Single Crystals,” Journal of Physics and Chemistry of Solids 59 (1998) 2215-2217.

93. J. Lettieri, C.I. Weber, and D.G. Schlom, “Comment on ‘Control of epitaxial growth for SrBi₂Ta₂O₉ thin films’ [Appl. Phys. Lett. 72, 665 (1998)],” Applied Physics Letters 73 (1998) 2057-2058.

92. C.D. Theis, J. Yeh, D.G. Schlom, M.E. Hawley, and G.W. Brown, “Adsorption-Controlled Growth of PbTiO₃ by Reactive Molecular Beam Epitaxy,” Thin Solid Films 325 (1998) 107-114.

91. W. Tian, J.C. Jiang, X.Q. Pan, C.D. Thesis, and D.G. Schlom, “Microstructure of PbTiO₃/SrTiO₃ Superlattice Grown by MBE,” Microscopy and Microanalysis 4 (supplement 2, Proceedings: Microscopy & Microanalysis ’98) (1998) 576-577.

90. C.D. Theis, J. Yeh, D.G. Schlom, M.E. Hawley, G.W. Brown, J.C. Jiang, and X.Q. Pan “Adsorption-Controlled Growth of Bi₄Ti₃O₁₂ by Reactive MBE,” Applied Physics Letters 72 (1998) 2817-2819.

89. K. Wasa, Y. Haneda, T. Satoh, H. Adachi, I. Kanno, D.G. Schlom, S. Trolier-McKinstry, Q. Gang, and C-B. Eom, “Basic Sputtering Process and Ferroelectric Properties of Single-Domain Single-Crystal Thin Films of PbTiO₃,” Integrated Ferroelectrics 21 (1998) 451-460.

88. J P. Maria, S. Trolier-McKinstry, D.G. Schlom, M.E. Hawley, and G.W. Brown, “The Influence of Energetic Bombardment on the Structure and Properties of Epitaxial SrRuO₃ Thin Films Grown by Pulsed Laser Deposition,” Journal of Applied Physics 83 (1998) 4373-4379.

87. B.C. Chakoumakos, D.G. Schlom, M. Urbanik, and J. Luine, “Thermal Expansion of LaAlO₃ and (La,Sr)(Al,Ta)O₃, Substrate Materials for Superconducting Thin-Film Device Applications,” Journal of Applied Physics 83 (1998) 1979-1982.

86. K. Wasa, Y. Haneda, T. Satoh, H. Adachi, I. Kanno, K Setsune, D.G. Schlom, S. Trolier-McKinstry, and C-B. Eom, “Continuous Single Crystal PbTiO₃ Thin Films Epitaxially Grown on Miscut (001)SrTiO₃,” Journal of the Korean Physical Society 32 (1998) S1344-1348.

85. D.G. Schlom, “Visualizing the Anisotropy of Crystals: Nye plus 3 D Graphics,” Journal of Materials Education 20 (1998) 77-90.

84. D.G. Schlom, C.D. Theis, and M.E. Hawley, “The Controlled Growth of Perovskite Thin Films: Opportunities, Challenges, and Synthesis,” in: Integrated Thin Films and Applications, edited by R.K. Pandey, D.E. Witter, and U. Varshney, Vol. 86 (American Ceramic Society, Westerville, 1998), pp. 41-60.

83. J P. Maria, S. Trolier-McKinstry, and D.G. Schlom, “Structure-Property Relationships in SrRuO₃ Epitaxial Thin Films,” in: Epitaxial Oxide Thin Films III, edited by D.G. Schlom, C.B. Eom, M.E. Hawley, C.M. Foster, and J.S. Speck, Vol. 474 (Materials Research Society, Pittsburgh, 1997), pp. 217-222.

82. C.D. Theis, J. Yeh, M.E. Hawley, G.W. Brown, and D.G. Schlom, “Adsorption-Controlled Growth of Ferroelectric PbTiO₃ and Bi₄Ti₃O₁₂ Films for Nonvolatile Memory Applications by MBE,” in: Epitaxial Oxide Thin Films III, edited by D.G. Schlom, C.B. Eom, M.E. Hawley, C.M. Foster, and J.S. Speck, Vol. 474 (Materials Research Society, Pittsburgh, 1997), pp. 297-302.

81. R.L. Goettler, J.P. Maria, and D.G. Schlom, “Origin of the (110) Orientation of Y₂O₃ and CeO₂ Epitaxial Films Grown on (100) Silicon,” in: Epitaxial Oxide Thin Films III, edited by D.G. Schlom, C.B. Eom, M.E. Hawley, C.M. Foster, and J.S. Speck, Vol. 474 (Materials Research Society, Pittsburgh, 1997), pp. 333-338.

80. D.G. Schlom, B.A. Merritt, S. Madhavan, Y. Liu, M.E. Hawley, G.W. Brown, A. Dabkowski, H.A. Dabkowska, R. Uecker, and P. Reiche, “Epitaxial YBa₂Cu₃O_7-d / Sr₂RuO₄ Heterostructures,” in: Epitaxial Oxide Thin Films III, edited by D.G. Schlom, C.B. Eom, M.E. Hawley, C.M. Foster, and J.S. Speck, Vol. 474 (Materials Research Society, Pittsburgh, 1997), pp. 85-90.

79. D.J. Gundlach, Y. Y. Lin, T.N. Jackson, and D.G. Schlom, “Oligophenyl-Based Organic Thin Film Transistors,” Applied Physics Letters 71 (1997) 3853-3855.

78. D.G. Schlom, S.B. Knapp, S. Wozniak, L-N. Zou, J. Park, Y. Liu, M.E. Hawley, G.W. Brown, A. Dabkowski, H.A. Dabkowska, R. Uecker, and P. Reiche, “Growth of Epitaxial (Sr,Ba)_n+1Ru_nO_3n+1 Films,” Superconductor Science and Technology 10 (1997) 891-895.

77. C.D. Theis and D.G. Schlom, “The Reactivity of Ozone Incident onto the Surface of Perovskite Thin Films Grown by MBE,” in: High Temperature Materials Chemistry IX, edited by K.E. Spear, Vol. 97-39 (Electrochemical Society, Pennington, 1997), pp. 610-616.

76. J.C. Clark, J.P. Maria, K.J. Hubbard, and D.G. Schlom, “An Oxygen-Compatible Radiant Substrate Heater for Thin-Film Growth at Substrate Temperatures up to 1050 °C,” Review of Scientific Instruments 68 (1997) 2538-2541.

75. S. Madhavan, Ying Liu, D.G. Schlom, A. Dabkowski, H.A. Dabkowska, Y. Suzuki, I. Takeuchi, Z. Trajanovic, and R.P. Sharma, “Epitaxial Sr₂RuO₄ Heterostructures,” IEEE Transactions on Applied Superconductivity 7 (1997) 2063-2066.

74. C.D. Theis and D.G. Schlom, “Domain Structure of Epitaxial PbTiO₃ Films Grown on Vicinal (001) SrTiO₃,” Journal of Materials Research 12 (1997) 1297-1305.

73. C.D. Theis and D.G. Schlom, “Epitaxial Lead Titanate Grown by MBE,” Journal of Crystal Growth 174 (1997) 473-479.

72. S. Madhavan, J.A. Mitchell, T. Nemoto, S. Wozniak, Ying Liu, D.G. Schlom, A. Dabkowski, and H.A. Dabkowska, “Growth of Epitaxial Sr₂RuO₄ Films and YBa₂Cu₃O_7-d / Sr₂RuO₄ Heterostructures,” Journal of Crystal Growth 174 (1997) 417-423.

71. D.J. Gundlach, Y.Y. Lin, T.N. Jackson, S.F. Nelson, and D.G. Schlom, “Pentacene Organic Thin-Film Transistors—Molecular Ordering and Mobility,” IEEE Electron Device Letters 18 (1997) 87-89.

70. D.G. Schlom, “Visualizing the Physics of Materials—Part II,” Journal of Materials Education 19 (1997) 77-85.

69. Y. Liu, J.A. Mitchell, S. Madhavan, D.G. Schlom, A. Dabkowski, and H.A. Dabkowska, “Electrical Transport Studies of Epitaxial Sr₂RuO₄ Films,” Czechoslovak Journal of Physics 46 (supplement, part S2) (1996) 1113-1114.

68. S. Madhavan, B.J. Gibbons, A. Dabkowski, H.A. Dabkowska, S. Trolier McKinstry, Y. Liu, and D.G. Schlom, “Growth of Epitaxial a axis and c axis Oriented Sr₂RuO₄ Films,” in: Epitaxial Oxide Thin Films II, edited by J.S. Speck, D.K. Fork, R.M. Wolf, and T. Shiosaki, Vol. 401 (Materials Research Society, Pittsburgh, 1996), pp. 435-440.

67. J.L. Lacey and D.G. Schlom, “c axis Oriented Lithium Niobate Films on (001) Magnesium Oxide by Pulsed Laser Deposition,” in: Epitaxial Oxide Thin Films II, edited by J.S. Speck, D.K. Fork, R.M. Wolf, and T. Shiosaki, Vol. 401 (Materials Research Society, Pittsburgh, 1996), pp. 393-398.

66. C.J. Kraisinger, D.M. Fusina, and D.G. Schlom, “Computer Simulation, Design, and Characterization of a Nozzle for More Effective Delivery of Oxidizing Gases,” in: Epitaxial Oxide Thin Films II, edited by J.S. Speck, D.K. Fork, R.M. Wolf, and T. Shiosaki, Vol. 401 (Materials Research Society, Pittsburgh, 1996), pp. 387-392.

65. B.J. Gibbons, S. Trolier-McKinstry, D.G. Schlom, and C.B. Eom, “Oxide Superconductor Interfaces Studied by Spectroscopic Ellipsometry,” in: Epitaxial Oxide Thin Films II, edited by J.S. Speck, D.K. Fork, R.M. Wolf, and T. Shiosaki, Vol. 401 (Materials Research Society, Pittsburgh, 1996), pp. 333-338.

64. C.D. Theis and D.G. Schlom, “Epitaxy of PbTiO3 on (100) SrTiO₃ and Vicinal (100) SrTiO₃ by Pulsed Laser Deposition,” in: Epitaxial Oxide Thin Films II, edited by J.S. Speck, D.K. Fork, R.M. Wolf, and T. Shiosaki, Vol. 401 (Materials Research Society, Pittsburgh, 1996), pp. 171-176.

63. K. Wasa, T. Sato, H. Adachi, K. Setsune, S. Trolier-McKinstry, and D.G. Schlom, “Structural Control of Epitaxially Grown Sputtered Perovskite Thin Films,” in: Epitaxial Oxide Thin Films II, edited by J.S. Speck, D.K. Fork, R.M. Wolf, and T. Shiosaki, Vol. 401 (Materials Research Society, Pittsburgh, 1996), pp. 151-161.

62. J P. Maria, S. Trolier-McKinstry, and D.G. Schlom, “Size Effects in Barium Titanate Thin Film Heterostructures with Conductive Oxide Electrodes,” in: ISAF ‘96: Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics, vol. 1 (IEEE, Piscataway, 1996), pp. 333-336.

61. K.J. Hubbard and D.G. Schlom, “Thermodynamic Stability of Binary Oxides in Contact with Silicon,” Journal of Materials Research 11 (1996) 2757-2776.

60. K.J. Hubbard and D.G. Schlom, “Thermodynamic Stability of Binary Oxides in Contact with Silicon,” in: Epitaxial Oxide Thin Films II, edited by J.S. Speck, D.K. Fork, R.M. Wolf, and T. Shiosaki, Vol. 401 (Materials Research Society, Pittsburgh, 1996), pp. 33-38.

59. C.D. Theis and D.G. Schlom, “Cheap and Stable Titanium Source for Use in Oxide Molecular Beam Epitaxy Systems,” Journal of Vacuum Science and Technology A 14 (1996) 2677-2679.

58. D.G. Schlom, E.S. Hellman, E.H. Hartford, Jr., C.B. Eom, J.C. Clark, and J. Mannhart, “Origin of the f ~ ±9° Peaks in YBa₂Cu₃O_7-d Films Grown on Cubic Zirconia Substrates,” Journal of Materials Research 11 (1996) 1336-1348.

57. C.D. Theis and D.G. Schlom, “Domain Structure of Epitaxial PbTiO₃ Films Grown on Vicinal (001) SrTiO₃,” in: ISAF ‘96: Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics, vol. 1 (IEEE, Piscataway, 1996), pp. 491-494.

56. D.G. Schlom, “Visualizing the Physics of Materials,” Journal of Materials Education 18 (1996) 77-95.

55. S. Madhavan, D.G. Schlom, A. Dabkowski, H.A. Dabkowska, and Y. Liu, “Growth of Epitaxial a axis and c axis Oriented Sr₂RuO₄ Films,” Applied Physics Letters 68 (1996) 559-561.

54. S. Trolier-McKinstry, C.A. Randall, J.P. Maria, C. Theis, D.G. Schlom, J. Shepard, Jr., and K. Yamakawa, “Size Effects and Domains in Ferroelectric Thin Film Actuators,” in: Ferroelectric Thin Films V, edited by S.B. Desu, R. Ramesh, B.A. Tuttle, R.E. Jones, and I.K. Yoo, Vol. 433 (Materials Research Society, Pittsburgh, 1996), pp. 363-374. 1996

53. K.J. Hubbard and D.G. Schlom, “Thermodynamic Stability of Binary Oxides in Contact with Silicon,” in: Structure and Properties of Interfaces in Ceramics, edited by D.A. Bonnell, U. Chowdhry, and M. Rühle, Vol. 357 (Materials Research Society, Pittsburgh, 1995), pp. 331-336.

52. N. Chandrasekhar and D.G. Schlom, “Evidence for Surface Melting During the Growth of High T_c Thin Films,” Physica C 235-240 (1994) 697-698.

51. J. Mannhart, J.G. Bednorz, A. Catana, Ch. Gerber, and D.G. Schlom, “High T_c Thin Films. Growth Modes—Structure—Applications,” in: Materials and Crystallographic Aspects of HTc Superconductivity, edited by E. Kaldis (Kluwer, Erice, 1994), pp. 453-470.

50. D.G. Schlom, D. Anselmetti, J.G. Bednorz, Ch. Gerber, and J. Mannhart, “Epitaxial Growth of Cuprate Superconductors from the Gas Phase,” Journal of Crystal Growth 137 (1994) 259-267.

49. J. Mannhart, J.G. Bednorz, Ch. Gerber, D.G. Schlom, and J. Ströbel, “Electric Field Effects in YBa₂Cu₃O_7-d Films,” Physica B 194-196 (1994) 1353-1354.

48. G.L. Catchen, T.M. Rearick, and D.G. Schlom, “High-Temperature Phase Transitions and Low-Temperature Magnetic Ordering in SrRuO₃ and CaRuO₃ Ceramics Studied Using Perturbed-Angular-Correlation Spectroscopy,” Physical Review B 49 (1994) 318-326.

47. D.G. Schlom, D. Anselmetti, J.G. Bednorz, Ch. Gerber, and J. Mannhart, “Defect-Mediated Growth of YBa₂Cu₃O_7-d Films,” in: Evolution of Surface and Thin Film Microstructure, edited by H.A. Atwater, E.H. Chason, M.L. Grabow, and M.G. Lagally, Vol. 280 (Materials Research Society, Pittsburgh, 1993), pp. 341-344.

46. A. Catana, J.G. Bednorz, Ch. Gerber, J. Mannhart, and D.G. Schlom, “Surface Outgrowths on Sputtered YBa₂Cu₃O_7-x Films: A Combined Atomic Force Microscopy and Transmission Electron Microscopy Study,” Applied Physics Letters 63 (1993) 553-555.

45. J. Mannhart, J.G. Bednorz, K.A. Müller, D.G. Schlom, and J. Ströbel, “Electric Field Effect in High-T_c Superconductors,” Journal of Alloys and Compounds 195 (1993) 519-526.

44. D.G. Schlom, “Epitaxial Growth of High Temperature Superconductors from the Gas Phase,” in: International Workshop on Superconductivity Co-Sponsored by ISTEC and MRS: Controlled Growth of Single- and Poly-Crystals of High Temperature Superconductors (ISTEC/MRS, Honolulu, 1992), pp. 34-37.

43. A. Catana, D.G. Schlom, J. Mannhart, and J.G. Bednorz, “a/c YBa₂Cu₃O₇ Boundaries: Preferential Sites for the Nucleation of Epitaxial Y₂O₃ Precipitates,” Applied Physics Letters 61 (1992) 720-722.

42. F. Lichtenberg, A. Catana, J. Mannhart, and D.G. Schlom, “Sr₂RuO₄: A Metallic Substrate for the Epitaxial Growth of YBa₂Cu₃O_7-d,” Applied Physics Letters 60 (1992) 1138-1140.

41. A. Catana, R.F. Broom, J.G. Bednorz, J. Mannhart, and D.G. Schlom, “Identification of Epitaxial Y₂O₃ Inclusions in Sputtered YBa₂Cu₃O₇ Films: Impact on Film Growth,” Applied Physics Letters 60 (1992) 1016-1018.

40. J. Mannhart, D. Anselmetti, J.G. Bednorz, A. Catana, Ch. Gerber, K.A. Müller, and D.G. Schlom, “Correlation Between J_c and Screw Dislocation Density in Sputtered YBa₂Cu₃O_7-d Films,” Zeitschrift für Physik B 86 (1992) 177-181.

39. D.G. Schlom, D. Anselmetti, J.G. Bednorz, R. Broom, A. Catana, T. Frey, Ch. Gerber, H.-J. Güntherodt, H.P. Lang, and J. Mannhart, “Screw Dislocation Mediated Growth of Sputtered and Laser-Ablated YBa₂Cu₃O_7-d Films,” Zeitschrift für Physik B 86 (1992) 163-175.

38. J. Mannhart, D. Anselmetti, J.G. Bednorz, Ch. Gerber, K.A. Müller, and D.G. Schlom, “Pinning Centers in YBa₂Cu₃O_7-d Films,” Superconductor Science & Technology 5 (1992) S125-S128.

37. D.G. Schlom, A.F. Marshall, J.S. Harris, Jr., I. Bozovic, and J.N. Eckstein, “Growth of Metastable Phases and Superlattice Structures of Bi-Sr-Ca-Cu-O Compounds by an Atomic Layering MBE Technique,” in: Advances in Superconductivity III: Proceedings of the 3rd International Symposium on Superconductivity (ISS ‘90), edited by K. Kajimura and H. Hayakawa (Springer-Verlag, Tokyo, 1991), pp. 1011-1016.

36. J.G. Bednorz, J. Mannhart, C.A. Müller, and D.G. Schlom, “Superconducting Device with Enhanced Sensitivity,” IBM Technical Disclosure Bulletin 34 (1991) 13-14.

35. D.G. Schlom, D. Anselmetti, J.G. Bednorz, Ch. Gerber, J. Mannhart, and K.A. Müller, “Observation of Screw Dislocations in Sputtered YBa₂Cu₃O_7-d Films,” Physica C 185-189 (1991) 2007-2008.

34. J. Mannhart, D.G. Schlom, J.G. Bednorz, and K.A. Müller, “Electric Field Effect on Superconducting YBa₂Cu₃O_7-d Films,” Physica C 185-189 (1991) 1745-1746.

33. J. Mannhart, D.G. Schlom, J.G. Bednorz, and K.A. Müller, “Influence of Electric Fields on Pinning in YBa₂Cu₃O_7-d Films,” Physical Review Letters 67 1991) 2099-2101.

32. J.N. Eckstein, I. Bozovic, D.G. Schlom, and J.S. Harris, Jr., “Growth of Superconducting Bi₂Sr₂Ca_n-1Cu_nO_x Thin Films by Atomically Layered Epitaxy,” Journal of Crystal Growth 111 (1991) 973-977.

31. J. Mannhart, J.G. Bednorz, K.A. Müller, and D.G. Schlom, “Electric Field Effect on Superconducting YBa₂Cu₃O_7-d Films,” Zeitschrift für Physik B 83 (1991) 307-311.

30. W.S. Lee, G.W. Yoffe, D.G. Schlom, and J.S. Harris, Jr., “Accurate Measurement of MBE Substrate Temperature,” Journal of Crystal Growth 111 (1991) 131-135.

29. C. Gerber, D. Anselmetti, J.G. Bednorz, J. Mannhart, and D.G. Schlom, “Screw Dislocations in High-T_c Films,” Nature 350 (1991) 279-280.

28. D.G. Schlom, “Molecular Beam Epitaxial Growth of Cuprate Superconductors and Related Phases,” Ph.D. Thesis (Stanford University, 1990).

27. D.G. Schlom, J.N. Eckstein, I. Bozovic, Z.J. Chen, A.F. Marshall, K.E. von Dessonneck, and J.S. Harris, Jr., “Molecular beam epitaxy—a path to novel high T_c superconductors?,” in: Growth of Semiconductor Structures and High-T_c Thin Films on Semiconductors, SPIE Vol. 1285 (SPIE, Bellingham, 1990), pp. 234-247 and in: High T_c Superconductivity: Thin Films and Applications, SPIE Vol. 1287 (SPIE, Bellingham, 1990), pp. 152-165.

26. I.Bozovic, J.N. Eckstein, D.G. Schlom, and J.S. Harris, “In-Situ Growth of Superconducting Single Crystal Bi-Sr-Ca-Cu-O Thin Films by Molecular Beam Epitaxy,” in: Science and Technology of Thin Film Superconductors 2, edited by R.D. McConnell and R. Noufi (Plenum, New York, 1990), pp. 267-272.

25. J.N. Eckstein, I. Bozovic, K.E. von Dessonneck, D.G. Schlom, and J.S. Harris, Jr., “Atomically Layered Heteroepitaxy of High Temperature Superconducting Thin Films: Metastable Phases and Superlattice Structures,” in: The Second ISTEC Workshop on Superconductivity (ISTEC, Kagoshima, 1990), pp. 37-40.

24. J.N. Eckstein, I. Bozovic, D.G. Schlom, and J.S. Harris, Jr., “Growth of Untwinned Bi₂Sr₂Ca₂Cu₃O_x Thin Films by Atomically Layered Epitaxy,” Applied Physics Letters 57 (1990) 1049-1051.

23. K. Kojima, D.G. Schlom, K. Kuroda, M. Tanioku, K. Hamanaka, J.N. Eckstein, and J.S. Harris, Jr., “Superstructure in Thin Films of Bi-Based Compounds on MgO,” Japanese Journal of Applied Physics 29 (1990) L1638-L1641.

22. J.N. Eckstein, I. Bozovic, K.E. von Dessonneck, D.G. Schlom, J.S. Harris, Jr., and S.M. Baumann, “Atomically Layered Heteroepitaxial Growth of Single-Crystal Films of Superconducting Bi₂Sr₂Ca₂Cu₃O_x,” Applied Physics Letters 57 (1990) 931-933.

21. D.G. Schlom, A.F. Marshall, J.T. Sizemore, Z.J. Chen, J.N. Eckstein, I. Bozovic, K.E. von Dessonneck, J.S. Harris, Jr., and J.C. Bravman, “Molecular Beam Epitaxial Growth of Layered Bi-Sr-Ca-Cu-O Compounds,” Journal of Crystal Growth 102 (1990) 361-375.

20. D.G. Schlom, J.N. Eckstein, I. Bozovic, A.F. Marshall, J.T. Sizemore, Z.J. Chen, K.E. von Dessonneck, J.S. Harris, Jr., and J.C. Bravman, “Molecular Beam Epitaxy of Layered Bi-Sr-Ca-Cu-O Compounds,” in: High Temperature Superconductors: Fundamental Properties and Novel Materials Processing, edited by D. Christen, J. Narayan, and L. Schneemeyer, Vol. 169 (Materials Research Society, Pittsburgh, 1990), pp. 711-714.

19. J.S. Harris, Jr., J.N. Eckstein, E.S. Hellman, and D.G. Schlom, “MBE Growth of High Critical Temperature Superconductors,” Journal of Crystal Growth 95 (1989) 607-616.

18. J.N. Eckstein, J.S. Harris, Jr., D.G. Schlom, I. Bozovic, K.E. von Dessonneck, and Z.J. Chen, “Development of Molecular Beam Epitaxial Growth of High Temperature Superconducting Compounds,” in: Extended Abstracts of 1989 International Superconductivity Electronics Conference (ISTEC, Tokyo, 1989), pp. 14-19.

17. E.S. Hellman, D.G. Schlom, A.F. Marshall, S.K. Streiffer, J.S. Harris, Jr., M.R. Beasley, J.C. Bravman, T.H. Geballe, J.N. Eckstein, and C. Webb, “Phase Characterization of Dysprosium Barium Copper Oxide Thin Films Grown on Strontium Titanate by Molecular Beam Epitaxy,” Journal of Materials Research 4 (1989) 476-495.

16. D.G. Schlom, W.S. Lee, T. Ma, and J.S. Harris, Jr., “Reduction of Gallium–Related Oval Defects,” Journal of Vacuum Science and Technology B 7 (1989) 296-298

15. J.N. Eckstein, D.G. Schlom, E.S. Hellman, K.E. von Dessonneck, Z.J. Chen, C. Webb, F. Turner, J.S. Harris, Jr., M.R. Beasley, and T.H. Geballe, “Epitaxial Growth of High-Temperature Superconducting Thin Films,” Journal of Vacuum Science and Technology B 7 (1989) 319-323.

14. B. Lee, M.H. Kim, S.S. Bose, G.E. Stillman, E.C. Larkins, E.S. Hellman, D.G. Schlom, and J.S. Harris, Jr., “Sulfur Incorporation in Undoped High Purity n-Type GaAs Grown by Molecular Beam Epitaxy,” in: Gallium Arsenide and Related Compounds, Vol. 96, (Atlanta, 1988), pp. 23-28.

13. D.G. Schlom, J.N. Eckstein, E.S. Hellman, S.K. Streiffer, J.S. Harris, Jr., M.R. Beasley, J.C. Bravman, T.H. Geballe, C. Webb, K.E. von Dessonneck, and F. Turner, “Molecular Beam Epitaxy of Layered Dy-Ba-Cu-O Compounds,” Applied Physics Letters 53 (1988) 1660-1662.

12. D.G. Schlom, J.N. Eckstein, E.S. Hellman, C. Webb, F. Turner, J.S. Harris, Jr., M.R. Beasley, and T.H. Geballe, “Molecular Beam Epitaxy of Layered Dy-Ba-Cu-O Compounds,” in: Extended Abstracts, High-Temperature Superconductors II, edited by D.W. Capone, II, W.H. Butler, B. Batlogg, and C.W. Chu (Materials Research Society, Pittsburgh, 1988), pp. 197-200.

11. E.S. Hellman, D.G. Schlom, N. Missert, K. Char, J.S. Harris, Jr., M.R. Beasley, A. Kapitulnik, T.H. Geballe, J.N. Eckstein, S.-L. Weng, and C. Webb, “Molecular Beam Epitaxy and Deposition of High-T_c Superconductors,” Journal of Vacuum Science and Technology B 6 (1988) 799-803.

10. G.W. Yoffe, D.G. Schlom, and J.S. Harris, Jr., “Summary Abstract: Molecular-Beam Epitaxial Growth of Tunable Multilayer Interference Optical Modulators,” Journal of Vacuum Science and Technology B 6 (1988) 688-688.

9. P.R. de la Houssaye, D.R. Allee, Y.-C. Pao, D.G. Schlom, J.S. Harris, Jr., and R.F.W. Pease, “Electron Saturation Velocity Variation in InGaAs and GaAs Channel MODFET's for Gate Lengths to 550 Å,” IEEE Electron Device Letters 9 (1988) 148-150.

8. D.R. Allee, P.R. de la Houssaye, D.G. Schlom, J.S. Harris, Jr., and R.F.W. Pease, “Sub-100 nm Gate Length GaAs Metal-Semiconductor Field-Effect Transistors and Modulation-Doped Field-Effect Transistors Fabricated by a Combination of Molecular Beam Epitaxy and Electron Beam Lithography,” Journal of Vacuum Science and Technology B 6 (1988) 328-332.

7. G.W. Yoffe, D.G. Schlom, and J.S. Harris, Jr., “Modulation of Light by an Electrically Tunable Multilayer Interference Filter,” Applied Physics Letters 51 (1987) 1876-1878.

6. C. Webb, S.-L. Weng, J.N. Eckstein, N. Missert, K. Char, D.G. Schlom, E.S. Hellman, M.R. Beasley, A. Kapitulnik, and J.S. Harris, Jr., “Growth of High T_c Superconducting Thin Films Using Molecular Beam Epitaxy Techniques,” Applied Physics Letters 51 (1987) 1191-1193. 12 Oct. 1987.

5. D.R. Allee, P.R. de la Houssaye, D.G. Schlom, B.W. Langley, J.S. Harris, Jr., and R.F.W. Pease, “Sub-100 nm Gate Length GaAs MESFETs Fabricated by Molecular Beam Epitaxy and Electron Beam Lithography” in: Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits (IEEE, Ithaca, 1987), pp. 190-198.

4. E.C. Larkins, E.S. Hellman, D.G. Schlom, and J.S. Harris, Jr. “GaAs with Very Low Acceptor Impurity Background Grown by Molecular Beam Epitaxy,” Journal of Crystal Growth 81 (1987) 344-348.

3. E.C. Larkins, E.S. Hellman, D.G. Schlom, and J.S. Harris, Jr., “Reduction of the Acceptor Impurity Background in GaAs Grown by Molecular Beam Epitaxy,” Applied Physics Letters 49 (1986) 391-393.

2. S.M. Koch, S.J. Rosner, D. Schlom, and J.S. Harris, Jr., “The Growth of GaAs on Si by Molecular Beam Epitaxy,” in: Heteroepitaxy on Silicon, edited by J.C.C. Fan and J.M. Poate (Materials Research Society, Pittsburgh, 1986), pp. 37-43.

1. D.G. Schlom and P.J. Shlichta, “Comparison of Theory with Experiment in Convectionless Growth of Crystals from Solution,” Journal of Crystal Growth 71 (1985) 791-794.

13. T. Gustafsson, E. Garfunkel, L. Goncharova, D. Starodub, R. Barnes, M. Dalponte, G. Bersuker, B. Foran, P. Lysaght, D.G. Schlom, V. Vaithyanathan, M. Hong, and J.R. Kwo, "Structure, Composition and Order at Interfaces of Crystalline Oxides and Other High-k Materials on Silicon," in: Defects in High-k Gate Dielectric Stacks: Nano-Electronic Semiconductor Devices, edited by E. Gusev (Springer, Berlin, 2006), pp. 349-360.

12. D.G. Schlom, C.A. Billman, J.H. Haeni, J. Lettieri, P.H. Tan, R.R.M. Held, S. Völk, and K.J. Hubbard, "High-K Candidates for use as the Gate Dielectric in Silicon MOSFETs," in: Thin Films and Heterostructures for Oxide Electronics, edited by S.B. Ogale (Springer, New York, 2005) pp. 31-78.

11. Fundamentals of Novel Oxide/Semiconductor Interfaces, edited by C.R. Abernathy, E.P. Gusev, D. Schlom, and S. Stemmer, Vol. 786 (Materials Research Society, Warrendale, 2004).

10. Proceedings of the 9^th International Workshop on Oxide Electronics, edited by D. Norton, C. Ahn, and D. Schlom, published in the December 2003 issue of Solid-State Electronics 47 (2003) 2139-2298.

9. Crystalline Oxide-Silicon Heterostructures and Oxide Optoelectronics, edited by D. Ginley, S. Guha, S. Carter, S.A. Chambers, R. Droopad, H. Hosono, D.C. Paine, D.G. Schlom, and J. Tate, Vol. 747 (Materials Research Society, Warrendale, 2003).

8. S. Stemmer and D.G. Schlom, "Experimental Investigations of the Stability of Candidate Materials for High K Gate Dielectrics in Silicon-Based MOSFETs," in: Nano and Giga Challenges in Microelectronics, edited by J. Greer, A. Korkin, and J. Labanowski (Elsevier, Amsterdam, 2003) pp. 129-150.

7. I. Bozovic and D.G. Schlom, "Superconducting Thin Films: Materials, Preparation, and Properties," in: The Encyclopedia of Materials: Science and Technology (Pergamon, Amsterdam, 2001) pp. 8955-8964.

6. D.G. Schlom and J. Mannhart, "High-Temperature Superconductors: Thin Films and Multilayers," in: The Encyclopedia of Materials: Science and Technology (Pergamon, Amsterdam, 2001) pp. 3806-3820.

5. Substrate Engineering—Paving the Way to Epitaxy, edited by D. Norton, D. Schlom, N. Newman, and D. Matthiesen, Vol. 587 (Materials Research Society, Warrendale, 2000).

4. Multicomponent Oxide Films for Electronics, edited by M.E. Hawley, D.H.A. Blank, C.B. Eom, D.G. Schlom, and S.K. Streiffer, Vol. 574 (Materials Research Society, Warrendale, 1999).

3. Proceedings of the 4^th International Workshop on Oxide Electronics, edited by D.G. Schlom, R. Ramesh, T. Venkatesan, and S. Wolf (Elsevier, Amsterdam, 1998).

2. Epitaxial Oxide Thin Films III, edited by D.G. Schlom, C.B. Eom, M.E. Hawley, C.M. Foster, and J.S. Speck, Vol. 474 (Materials Research Society, Pittsburgh, 1997).

1. D.G. Schlom and J.S. Harris, Jr., "MBE Growth of High Tc Superconductors," in: Molecular Beam Epitaxy: Applications to Key Materials, edited by R.F.C Farrow (Noyes, Park Ridge, 1995), pp. 505-622.

60. D.G. Schlom, D.A. Tenne, X.X. Xi, A. Bruchhausen, N.D. Lanzillotti Kimura, A. Fainstein, R.S. Katiyar, A. Cantarero, A. Soukiassian, V. Vaithyanathan, J.H. Haeni, W. Tian, K.J. Choi, C.-B. Eom, H.P. Sun, X.Q. Pan, Y.L. Li, L.Q. Chen, Q.X. Jia, S.M. Nakhmanson, K.M. Rabe, B. Velickov, and R. Uecker, “Ferroelectricity in (BaTiO₃)_n/(SrTiO₃)_m Superlattices Grown by MBE with n ≥ 1,” presented at the International Symposium on the Applications of Ferroelectrics 2006 (ISAF 2006) in Sunset Beach, North Carolina (2006).

59. D.G. Schlom, A. Soukiassian, M.D. Biegalski, W. Tian, D.A. Tenne, Y.L. Li, L.Q. Chen, S. Trolier-McKinstry, X.X. Xi, N.D. Lanzillotti Kimura, A. Bruchhausen, A. Fainstein, H.P. Sun, X.Q. Pan, K.J. Choi, C.B. Eom, K. Johnston, K. M. Rabe, A. Cross, A. Cantarero, R.S. Katiyar, M.E. Hawley, R. Uecker, and P. Reiche, "Growth of Ferroelectric BaTiO₃/SrTiO₃ Superlattices by MBE," presented at the Fall 2005 Materials Research Society Meeting in Boston, Massachusetts (2005).

58. D.G. Schlom, M.D. Biegalski, J.H. Haeni, Y.L. Li, A. Sharan, A.V. Rao, W. Tian, S. Choudhury, V. Vaithyanathan, V. Gopalan, L.Q. Chen, S. Trolier-McKinstry, D.D. Fong, S.K. Streiffer, J.A. Eastman, P.H. Fuoss, M.A. Zurbuchen, K.J. Choi, C.B. Eom, P. Irvin, J. Levy, Y.B. Chen, X.Q. Pan, W. Chang, S.W. Kirchoefer, J. Schubert, M.E. Hawley, A.K. Tagantsev, R. Uecker, and P. Reiche, "Enhancing Ferroelectrics using Strain," presented at the 2005 Swiss Workshop on Materials with Novel Electronic Properties in Les Diablerets, Switzerland (2005).

57. D.G. Schlom, M.D. Biegalski, J.H. Haeni, Y.L. Li, A. Sharan, A.V. Rao, W. Tian, S. Choudhury, V. Vaithyanathan, V. Gopalan, L.Q. Chen, S. Trolier-McKinstry, D.D. Fong, S.K. Streiffer, J.A. Eastman, P.H. Fuoss, M.A. Zurbuchen, K.J. Choi, C.B. Eom, P. Irvin, J. Levy, Y.B. Chen, X.Q. Pan, W. Chang, S.W. Kirchoefer, J. Schubert, M.E. Hawley, A.K. Tagantsev, R. Uecker, and P. Reiche, "Straining Ferroelectrics to New Limits," presented at the International Conference on Perovskites—Properties and Potential Applications in Dübendorf, Switzerland (2005). (Keynote Lecture)

56. D.G. Schlom, M.D. Biegalski, J.H. Haeni, Y.L. Li, A. Sharan, A.V. Rao, W. Tian, S. Choudhury, V. Vaithyanathan, V. Gopalan, L.Q. Chen, S. Trolier-McKinstry, D.D. Fong, S.K. Streiffer, J.A. Eastman, P.H. Fuoss, M.A. Zurbuchen, P. Irvin, J. Levy, X.Q. Pan, W. Chang, S.W. Kirchoefer, M.E. Hawley, A.K. Tagantsev, R. Uecker, and P. Reiche, "Inducing Ferroelectricity in SrTiO₃ using Strain," presented at Optics & Photonics (SPIE’s 50^th Annual Meeting) in San Diego, California (2005).

55. C.B. Eom and D.G. Schlom, "Giant Enhancement of Ferroelectricity in Strained BaTiO₃ Thin Films," presented at Optics & Photonics (SPIE’s 50th Annual Meeting) in San Diego, California (2005).

54. D.G. Schlom, W. Tian, M.D. Biegalski, J.H. Haeni, Y.L. Li, V. Vaithyanathan, A. Sharan, A.V. Rao, S. Choudhury, V. Gopalan, L.Q. Chen, S. Trolier-McKinstry, A. Soukiassian, D.A. Tenne, E. Hutchinson, B.L. Sheu, M.M. Rosario, P. Schiffer, Y. Liu, X.X. Xi, D.D. Fong, S.K. Streiffer, J.A. Eastman, P.H. Fuoss, M.A. Zurbuchen, K.J. Choi, C.B. Eom, Y.B. Chen, X.Q. Pan, P. Irvin, J. Levy, W. Chang, S.W. Kirchoefer, J. Schubert, A.K. Tagantsev, M.E. Hawley, R. Uecker, and P. Reiche, "Customizing Perovskites Using Oxide MBE," presented at the Spring 2005 Materials Research Society Meeting in San Francisco, California (2005).

53. D.G. Schlom, "Enhancing Ferroelectrics using Strain," presented at the 2005 March Meeting of the American Physical Society in Los Angeles, California (2005).

52. D.G. Schlom, "The Epitaxial Integration of Functional Oxides with Semiconductors," presented at the 2004 Annual Conference of the British Association for Crystal Growth (BACG) in Leeds, England (2004). (Plenary Lecture)

51. D.G. Schlom, "Suppression of Subcutaneous Oxidation during the Deposition of Amorphous LaAlO₃ on Silicon," presented at the 34^th IEEE Semiconductor Interface Specialists Conference in Washington, D.C. (2003).

50. D.G. Schlom, J.H. Haeni, J. Lettieri, L.F. Edge, Y. Jia, M. Biegalski, V. Vaithyanathan, S-G. Lim, S. Trolier-McKinstry, T.N. Jackson, Y. Yang, S. Stemmer, O. Trithaveesak, J. Schubert, S.A. Chambers, H. Li, Y. Wei, and K. Eisenbeiser, J.L. Freeouf, C. Hinkle, G. Lucovsky, R. Uecker, and P. Reiche, "Si-Compatible Alternative Gate Dielectrics with High k and High Bandgap," presented at the 10^th International Workshop on Oxide Electronics in Augsburg, Germany (2003).

49. D.G. Schlom, "Oxides Beyond SiO₂: Strategies to Integrate Oxides Epitaxially with Silicon," presented at the 30^th International Symposium on Compound Semiconductors (ISCS 2003) in San Diego, California (2003).

48. D.G. Schlom, J.H. Haeni, M.D. Biegalski, Y.L. Li, S. Choudhury, L.Q. Chen, S. Trolier-McKinstry, W. Tian, X.Q. Pan, P. Irvin, J. Levy, W. Chang, S. Kirchoefer, J.B. Neaton, C. Fennie, K.M. Rabe, K.J. Choi, C.B. Eom, M.E. Hawley, R. Uecker, and P. Reiche, "Epitaxial Engineering of Dielectrics and Ferroelectrics," presented at the International Conference on Electroceramics (ICE 2003) in Boston, Massachusetts (2003).

47. D.G. Schlom, "Engineering Ferroelectrics using Strain," presented at the 15^th American Conference on Crystal Growth and Epitaxy (ACCGE-15) in Keystone, Colorado (2003).

46. D.G. Schlom, J.H. Haeni, M.D. Biegalski, S. Trolier-McKinstry, P. Irvin, J. Levy, W. Chang, S. Kirchoefer, O. Trithaveesak, J. Schubert, W. Tian, X.Q. Pan, M.E. Hawley, B. Craigo, R. Uecker, and P. Reiche, "Growth of Homogeneously Strained SrTiO₃ by MBE for Tunable Dielectric Applications," presented at the IEEE International Microwave Symposium (IMS 2003) in Philadelphia, Pennsylvania (2003).

45. D.G. Schlom, J. Lettieri, V. Vaithyanathan, J.H. Haeni, B.T. Liu, K. Maki, Y. So, V. Nagarajan, R. Ramesh, S.K. Eah, J. Levy, W. Tian, X.Q. Pan, D.M. Kim, S. Bu, C.B. Eom, J. Stephens, V. Sih, and D.D. Awschalom, "The Epitaxial Integration of Functional Oxides with Silicon Using MBE," presented at the American Ceramic Society 105^th Annual Meeting in Nashville, Tennessee (2003).

44. D.G. Schlom, "Oxides on Silicon for Alternative Gate Dielectrics and Much More," presented at the 15^th Annual International Symposium on Integrated Ferroelectrics (ISIF) in Colorado Springs, Colorado (2003).

43. D.G. Schlom, "Bringing Oxides into the Silicon World: Strategies to Integrate Functional Oxides Epitaxially with Silicon," presented at the 132^nd TMS Annual Meeting and Exhibition in San Diego, California (2003).

42. D.G. Schlom, "Epitaxial Alternative Gate Dielectrics (and More)," presented at the 30^th Conference on The Physics and Chemistry of Semiconductor Interfaces (PCSI-30) in Salt Lake City, Utah (2003).

41. D.G. Schlom, J.H. Haeni, J. Lettieri, L.F. Edge, V. Vaithyanathan, Y. Yang, S. Stemmer, H. Li, Y. Wei, K. Eisenbeiser, S-G. Lim, T.N. Jackson, J.L. Freeouf, G. Lucovsky, R. Uecker, and P. Reiche, "Si-Compatible Alternative Gate Dielectrics with High K and High Optical Bandgap," presented at the Fall 2002 Materials Research Society Meeting in Boston, Massachusetts (2002).

40. D.G. Schlom, "Epitaxial Oxides on Silicon for Alternative Gate Dielectrics and More," presented at the AVS 49th International Symposium in Denver, Colorado (2002).

39. D.G. Schlom, "Epitaxial Engineering of Ferroelectrics and Use of Diffraction Techniques to Assess the Structural Quality and Crystallographic Orientation of Ferroelectric Films," presented at the Pan-American Advanced Study Institute (PASI) on Science and Technology of Ferroelectric Materials in Rosario, Argentina (2002).

38. D.G. Schlom, J.H. Haeni, J. Lettieri, V. Vaithyanathan, W. Tian, X.Q. Pan, B.T. Liu, K. Maki, Y. So, V. Nagarajan, R. Ramesh, D.M. Kim, S.D. Bu, C.B. Eom, J.B. Neaton, C. Fennie, K.M. Rabe, R. Uecker, and P. Reiche, "The Nano-Engineering of Perovskite Oxides by MBE," presented at the Fourteenth American Conference on Crystal Growth and Epitaxy (ACCGE-14) in Seattle, Washington (2002).

37. D.G. Schlom, "The Why and How of Oxide MBE," presented at the Fourteenth American Conference on Crystal Growth and Epitaxy (ACCGE-14) in Seattle, Washington (2002). (Tutorial)

36. D.G. Schlom, J.H. Haeni, J. Lettieri, Y. Jia, C.D. Theis, W. Tian, J.C. Jiang, X.Q. Pan, J.B. Neaton, C. Fennie, K.M. Rabe, A.M. Santos, and A.K. Cheetham "Epitaxial Engineering of Dielectrics and Ferroelectrics," presented at the 47^th SPIE Annual Meeting in Seattle, Washington (2002)

35. D.G. Schlom, "MBE Growth of Epitaxial Oxides on Silicon," presented at the 2002 March Meeting of the American Physical Society in Indianapolis, Indiana (2002).

34. D.G. Schlom, "Epitaxial Engineering of Oxide Films, Superlattices, and New Compounds," presented at the International Workshop on "Oxidic Interfaces" in Wittenberg, Germany (2002).

33. D.G. Schlom, "Si-Compatible Gate Dielectrics with High K, High E_g, and an MBE Approach to their Synthesis," presented at SEMICON Southwest 2001 in Austin, Texas (2001).

32. D.G. Schlom, "Epitaxial Engineering of Ferroelectric and Dielectric Thin Films," to be presented at the 13^th International Conference on Crystal Growth in conjunction with the 11^th International Conference on Vapor Growth and Epitaxy in Kyoto, Japan (2001).

31. D.G. Schlom, J.H. Haeni, J. Lettieri, S-G. Lim, S. Trolier-McKinstry, T.N. Jackson, J.L. Freeouf, C.A. Billman, J.M. Finder, A.M. Balbashov, R. Uecker, A.G. Petrosyan, R.R.M. Held, S. Völk, and F. Lichtenberg, "Si-Compatible Gate Dielectrics with High K, High Optical Bandgap, and their Epitaxy on Silicon" to be presented at the 43^rd Electronic Materials Conference in Notre Dame, Indiana (2001).

30. Z-K. Liu, D.G. Schlom, Q. Li, and X.X. Xi, "Thermodynamics of the Mg-B System and its Implications for the in situ Deposition of MgB₂ Thin Films," presented at the Spring 2001 Materials Research Society Meeting in San Francisco, California (2001).

29. D.G. Schlom, "Use of X-Ray Diffraction to Assess the Quality and Crystallographic Orientation of Oxide Thin Films," presented at the Spring 2001 Materials Research Society Meeting in San Francisco, California (2001). (Tutorial)

28. D.G. Schlom, J.H. Haeni, J. Lettieri, S-G. Lim, K.J. Hubbard, S. Trolier-McKinstry, T.N. Jackson, J.L. Freeouf, C.A. Billman, A.M. Balbashov, R. Uecker, A.G. Petrosyan, R.R.M. Held, S. Völk, and F. Lichtenberg, "Si-Compatible Gate Oxides with High K, High Optical Bandgap, and their Epitaxy on Si (100)," presented at the 13^th Annual International Symposium on Integrated Ferroelectrics (ISIF) in Colorado Springs, Colorado (2001).

27. D.G. Schlom, "Physical Vapor Deposition Techniques - Sputtering, PLD, and MBE," presented at the 13^th Annual International Symposium on Integrated Ferroelectrics (ISIF) in Colorado Springs, Colorado (2001). (Tutorial)

26. D.G. Schlom, J.H. Haeni, J. Lettieri, C.D. Theis, W. Tian, J.C. Jiang, X.Q. Pan, G.W. Brown and M.E. Hawley "Oxide Nano-Engineering using MBE," presented at the Lawrence Symposium on Critical Issues in Epitaxy in Scottsdale, Arizona (2001).

25. D.G. Schlom, M.A. Zurbuchen, J.H. Haeni, J. Lettieri, C.D. Theis, J. Yeh, A.H. Carim, W. Tian, J.C. Jiang, X.Q. Pan, G.W. Brown, and M.E. Hawley, "The Interrelationship between Interfaces and the Structural Customization on the Nanometer Scale of Oxide Films, Superlattices, and New Compounds," presented at the Fall 2000 Materials Research Society Meeting in Boston, Massachusetts (2000).

24. D.G. Schlom, J.H. Haeni, C.D. Theis, W. Tian, X.Q. Pan, G.W. Brown, and M.E. Hawley "The Importance of In Situ Monitors in the Preparation of Layered Oxide Heterostructures by Reactive MBE," presented at the Spring '00 Materials Research Society Meeting in San Francisco, California (2000).

23. D.G. Schlom, "Physical Deposition Methods: Sputtering, PLD, and MBE," presented at the 12^th International Symposium on Integrated Ferroelectrics (ISIF 2000) in Aachen, Germany (2000). (Tutorial)

22. D.G. Schlom, J.H. Haeni, W. Tian, L-N. Zou, M.A. Zurbuchen, Y. Jia, G.W. Brown, M.E. Hawley, A.H. Carim, Y. Liu, and X.Q. Pan, "Growth of Superconductor-Related Layered Ruthenates and Layered Titanates," presented at the Fall '99 Materials Research Society Meeting in Boston, Massachusetts (1999).

21. D.G. Schlom, J. Lettieri, M.A. Zurbuchen, C.D. Theis, J.H. Haeni, Y. Jia, S. Wozniak, G.W. Brown, M.E. Hawley, W. Tian, J.C. Jiang, X.Q. Pan, A. Dabkowski, H.A. Dabkowska, R. Uecker, and P. Reiche, "Substrates for Epitaxial Oxide Films - A Film Grower's Perspective," presented at the 11^th American Conference on Crystal Growth & Epitaxy in Tucson, Arizona (1999).

20. D.G. Schlom, J.H. Haeni, C.D. Theis, J. Lettieri, M.A. Zurbuchen, W. Tian, J.C. Jiang, L-N. Zou, G.W. Brown, M.E. Hawley, Y. Liu, and X.Q. Pan, "Nano-Engineering Perovskites: An Epitaxial Perspective (with examples)," presented at the 3^rd STCS-CNRS Workshop in Evanston, Illinois (1999).

19. D.G. Schlom, C.D. Theis, J. Lettieri, Y. Jia, W. Si, X.X. Xi, G.W. Brown, M.E. Hawley, J.C. Jiang, X.Q. Pan, H. Li, R. Ramesh, O. Auciello, J. Im, A.R. Krauss, R. Uecker, and P. Reiche, "Epitaxial Growth of Aurivillius Phases by MBE and PLD," presented at the 11^th International Symposium on Integrated Ferroelectrics (ISIF '99) in Colorado Springs, Colorado (1999).

18. D.G. Schlom, C.A. Billman, P. Tan, and K.J. Hubbard, "High-K Candidates for use as the Gate Oxide in Silicon MOSFETs," presented at the 5^th International Workshop on Oxide Electronics in College Park, Maryland (1998).

17. D.G. Schlom, C.D. Theis, J. Lettieri, J.C. Jiang, X.Q. Pan, G.W. Brown, and M.E. Hawley, "Adsorption-Controlled growth of Bismuth Titanate, Lead Titanate, and their Superlattices," presented at the International Workshop on Chemical Designing and Processing of High-T_c Superconductors IV (Chem-HTSC IV) in Tokyo, Japan (1998).

16. D.G. Schlom, J.H. Haeni, C.D. Theis, J. Lettieri, W. Tian, J.C. Jiang, L-N. Zou, G.W. Brown, M.E. Hawley, Y. Liu, and X.Q. Pan, "The Emergence of Molecular Beam Epitaxy as a Means to Build Smart Oxide Heterostructures with Nanometer Precision," presented at the 56^th Annual Pittsburgh Diffraction Conference in Pittsburgh, Pennsylvania (1998).

15. D.G. Schlom, "Epitaxial Growth and Properties of Perovskite Thin Films," presented at The 12^th International Conference on Crystal Growth in conjunction with The 10^th International Conference on Vapor Growth and Epitaxy in Jerusalem, Israel (1998).

14. D.G. Schlom, Y. Jia, L.-N. Zou, J.H. Hanei, M.A. Zurbuchen, S. Briczinski, C.W. Leitz, S. Wozniak, Y. Liu, M.E. Hawley, G.W. Brown, A. Dabkowski, H.A. Dabkowska, R. Uecker, and P. Reiche, "Searching for Superconductivity in Epitaxial Films of Copper-Free Layered Oxides with the K₂NiF₄ Structure," presented at the 43^rd SPIE Annual Meeting in San Diego, California (1998).

13. D.G. Schlom, C.D. Theis, J.H. Hanei, G.W. Brown, M.E. Hawley, J.C. Jiang, and X.Q. Pan, "The Growth of Titanate Perovskites with Unit Cell Precision by MBE," presented at the 40^th Electronic Materials Conference in Charlottesville, Virginia (1998).

12. D.G. Schlom, C.D. Theis, J.P. Lettieri, and J.H. Hanei, "MBE Growth of Oxide Superconductor Films using Real-Time Atomic Absorption Composition Control," presented at the 215^th Spring National American Chemical Society Meeting in Dallas, Texas (1998).

11. D.G. Schlom, C.D. Theis, J. Lettieri, B.J. Gibbons, and S. Trolier-McKinstry, "MBE Growth of Oxides using Real-Time AA and RHEED Control," presented at the Fall '97 Materials Research Society Meeting in Boston, Massachusetts (1997).

10. D.G. Schlom, S.B. Knapp, S. Wozniak, Ying Liu, M.E. Hawley, G.W. Brown, A. Dabkowski, H.A. Dabkowska, R. Uecker, and P. Reiche, "Growth of Epitaxial (Sr,Ba)_n+1Ru_nO_3n+1 Films," presented at the 3^rd European Conference on Applied Superconductivity in Veldhoven, The Netherlands (1997).

9. D.G. Schlom, C.D. Theis, and M.E. Hawley, "The Controlled Growth of Perovskite Thin Films: Opportunities, Challenges, and Synthesis," presented at the American Ceramic Society 99^th Annual Meeting in Cincinnati, Ohio (1997).

8. D.G. Schlom, C.D. Theis, and C.J. Kraisinger "MBE Growth of Perovskite Thin Films using Real-Time Atomic Absorption Composition Control," presented at The First Yamazaki International Symposium on Oxide Materials with Optoelectronic Functions and 3^rd International Symposium on Oxide Electronics in Tokyo, Japan (1996).

7. D.G. Schlom, J. Mannhart, and J.G. Bednorz, "High-T_c Superconductor Field-Effect Microstructures: An Overview," presented at the SPIE OE/LASE '94 International Symposium in Los Angeles, California (1994).

6. D.G. Schlom, "Epitaxial Growth of Cuprate Superconductors from the Gas Phase," presented at the Ninth American Conference on Crystal Growth (ACCG-9) in Baltimore, Maryland (1993).

5. D.G. Schlom, "Epitaxial Growth of High Temperature Superconductors from the Gas Phase," presented at the International Workshop on Superconductivity Co-Sponsored by ISTEC and MRS: Controlled Growth of Single- and Poly-Crystals of High Temperature Superconductors in Honolulu, Hawaii (1992). (Plenary Lecture)

4. D.G. Schlom, D. Anselmetti, J.G. Bednorz, R. Broom, A. Catana, T. Frey, Ch. Gerber, H.-J. Güntherodt, H.P. Lang, J. Mannhart, and K.A. Müller, "Towards the Growth Mechanism of Sputtered and Laser-Ablated YBa₂Cu₃O_7-d Films and Implications for Josephson Electronic Components," presented at the International Workshop on Physics and Technology of HTS Artificial Structures for Josephson Electronics in Tokyo, Japan (1991).

3. D.G. Schlom, A.F. Marshall, J.S. Harris, Jr., I. Bozovic, and J.N. Eckstein, "Growth of Metastable Phases and Superlattice Structures of Bi-Sr-Ca-Cu-O Compounds by an Atomic Layering MBE Technique," presented at the 3^rd International Symposium on Superconductivity in Sendai, Japan (1990).

2. D.G. Schlom, A.F. Marshall, J.S. Harris, Jr., I. Bozovic, and J.N. Eckstein, "Growth of Metastable Phases and Superlattice Structures of Bi-Sr-Ca-Cu-O Compounds by an Atomic Layering MBE Technique," presented at the Symposium of Superconductivity of the Japan Society of Powder and Powder Metallurgy in Kyoto, Japan (1990).

1. D.G. Schlom, J.N. Eckstein, I. Bozovic, Z.J. Chen, A.F. Marshall, K.E. von Dessonneck, and J.S. Harris, Jr., "Molecular beam epitaxy-a path to novel high T_c superconductors?," presented at the joint SPIE session on Growth of Semiconductor Structures and High T_c Thin Films on Semiconductors and High T_c Superconductivity: Thin Films and Applications in San Diego, California (1990).